ترغب بنشر مسار تعليمي؟ اضغط هنا

Nuclear spin-lattice relaxation in p-type GaAs

65   0   0.0 ( 0 )
 نشر من قبل Masha Vladimirova
 تاريخ النشر 2018
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Spin-lattice relaxation of the nuclear spin system in p-type GaAs is studied using a three-stage experimental protocol including optical pumping and measuring the difference of the nuclear spin polarization before and after a dark interval of variable length. This method allows us to measure the spin-lattice relaxation time $T_1$ of optically pumped nuclei in the dark, that is, in the absence of illumination. The measured $T_1$ values fall into the sub-second time range, being three orders of magnitude shorter than in earlier studied n-type GaAs. The drastic difference is further emphasized by magnetic-field and temperature dependences of $T_1$ in p-GaAs, showing no similarity to those in n-GaAs. This unexpected behavior is explained within a developed theoretical model involving quadrupole relaxation of nuclear spins, which is induced by electric fields within closely spaced donor-acceptor pairs.



قيم البحث

اقرأ أيضاً

We investigate the dynamically polarized nuclear-spin system in Fe/emph{n}-GaAs heterostructures using the response of the electron-spin system to nuclear magnetic resonance (NMR) in lateral spin-valve devices. The hyperfine interaction is known to a ct more strongly on donor-bound electron states than on those in the conduction band. We provide a quantitative model of the temperature dependence of the occupation of donor sites. With this model we calculate the ratios of the hyperfine and quadrupolar nuclear relaxation rates of each isotope. For all temperatures measured, quadrupolar relaxation limits the spatial extent of nuclear spin-polarization to within a Bohr radius of the donor sites and is directly responsible for the isotope dependence of the measured NMR signal amplitude. The hyperfine interaction is also responsible for the $2text{ kHz}$ Knight shift of the nuclear resonance frequency that is measured as a function of the electron spin accumulation. The Knight shift is shown to provide a measurement of the electron spin-polarization that agrees qualitatively with standard spin transport measurements.
162 - S. S. Kim , C. Huan , L. Yin 2012
We report measurements of the nuclear spin-lattice and spin-spin relaxation times of very dilute 3He in solid 4He in the temperature range 0.01 leq T leq 0.5 K for densities where anomalies have been observed in torsional oscillator and shear modulus measurements. We compare the results with the values of the relaxation times reported by other observers for higher concentrations and the theory of Landesman that takes into account the elastic properties of the 4He lattice. A sharp increase in the magnitude of the nuclear spin-lattice relaxation times compared to the the classical Landesman theory is observed close to the temperatures where the torsional and shear modulus anomalies are observed. The NMR results suggest that the tunneling of 3He impurities in the atomic-scale elastic distortion is affected by the same processes that give rise to the macroscopic elastic dissipation anomalies.
Temperature and magnetic field dependences of the 19F nuclear spin-lattice relaxation in a single crystal of LiYF4 doped with holmium are described by an approach based on a detailed consideration of the magnetic dipole-dipole interactions between nu clei and impurity paramagnetic ions and nuclear spin diffusion processes. The observed non-exponential long time recovery of the nuclear magnetization after saturation at intermediate temperatures is in agreement with predictions of the spin-diffusion theory in a case of the diffusion limited relaxation. At avoided level crossings in the spectrum of electron-nuclear states of the Ho3+ ion, rates of nuclear spin-lattice relaxation increase due to quasi-resonant energy exchange between nuclei and paramagnetic ions, in contrast to the predominant role played by electronic cross-relaxation processes in the low-frequency ac-susceptibility.
162 - E. A. Barry , A. A. Kiselev , 2003
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of moderate drift fields and/or non-zero injection energies. For relatively low fields (a couple of kV/cm), a substantial amount of spin polarization is preserved for several microns at 300 K. However, it is also found that the spin relaxation rate increases rapidly with the drift field, scaling as the square of the electron wavevector in the direction of the field. When the electrons are injected with a high energy, a pronounced decrease is observed in the spin relaxation length due to an initial increase in the spin precession frequency. Hence, high-field or high-energy transport conditions may not be desirable for spin-based devices.
A novel spin-spin coupling mechanism that occurs during the transport of spin-polarized minority electrons in semiconductors is described. Unlike the Coulomb spin drag, this coupling arises from the ambipolar electric field which is created by the di fferential movement of the photoelectrons and the photoholes. Like the Coulomb spin drag, it is a pure spin coupling that does not affect charge diffusion. Experimentally, the coupling is studied in $p^+$ GaAs using polarized microluminescence. The coupling manifests itself as an excitation power dependent reduction in the spin polarization at the excitation spot textit{without} any change of the spatially averaged spin polarization.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا