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Thin films of optimally-doped (001)-oriented YBa2Cu3O7-{delta} are epitaxially integrated on silicon (001) through growth on a single crystalline SrTiO3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the SrTiO3 buffer enables high quality YBa2Cu3O7-{delta} films exhibiting high transition temperatures to be integrated on Si. For a 30 nm thick SrTiO3 buffer, 50 nm thick YBa2Cu3O7-{delta} films that exhibit a transition temperature of ~ 93 K, and a narrow transition width (< 5 K) are achieved. The integration of single crystalline YBa2Cu3O7-{delta} on Si (001) paves the way for the potential exploration of cuprate materials in a variety of applications.
Using spin polarized neutron reflectivity experiments, we demonstrate an unusual proximity behaviour when the superconductor (SC) and the ferromagnet (FM) are coupled through an insulator (I) in YBa2Cu3O7-{delta} (SC)/SrTiO3 (I)/La0.67Sr0.33MnO3 (FM)
We investigated the suitability of AlN as a buffer layer for NbN superconducting nanowire single-photon detectors (SNSPDs) on GaAs. The NbN films with a thickness of 3.3 nm to 20 nm deposited onto GaAs substrates with AlN buffer layer, demonstrate a
Single monolayer FeSe film grown on Nb-doped SrTiO$_3$(001) substrate shows the highest superconducting transition temperature (T$_C$ $sim$ 100 K) among the iron-based superconductors (iron-pnictide), while T$_C$ of bulk FeSe is only $sim$ 8 K. Antif
Cryogenic scanning tunneling microscopy is employed to investigate the stoichiometry and defects of epitaxial FeSe thin films on SrTiO3(001) substrates under various post-growth annealing conditions. Low-temperature annealing with an excess supply of
In this letter, we present the superconducting property characterization of a phase pure reasonably good quality YBa2Cu3O7-{delta} sample. Studied compound is crystallized in orthorhombic Pmmm space group with lattice parameters a, b, and c are 3.829