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We report on a systematic study of Hall effect using high quality single crystals of type-II Weyl semimetal WTe2 with the applied magnetic field B//c. The residual resistivity ratio of 1330 and the large magnetoresistance of 1.5times10^6 % in 9 T at 2 K, being in the highest class in the literature, attest to their high quality. Based on a simple two-band model, the densities (n_e and n_h) and mobilities (mu_e and mu_h) for electron and hole carriers have been uniquely determined combining both Hall- and electrical-resistivity data. The difference between ne and nh is ~1% at 2 K, indicating that the system is in an almost compensated condition. The negative Hall resistivity growing rapidly below ~20 K is due to a rapidly increasing mu_h/mu_e approaching one. Below 3 K in a low field region, we found the Hall resistivity becomes positive, reflecting that mu_h/mu_e finally exceeds one in this region. These anomalous behaviors of the carrier densities and mobilities might be associated with the existence of a Lifshitz transition and/or the spin texture on the Fermi surface.
Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the photo-induce
A developing frontier in condensed matter physics is the emergence of novel electromagnetic responses, such as topological and anomalous Hall effect (AHE), in ferromagnetic Weyl semimetals (FM-WSMs). Candidates of FM-WSM are limited to materials that
We have investigated the magnetoresistance (MR) and Hall resistivity properties of the single crystals of tantalum sulfide, Ta3S2, which was recently predicted to be a new type II Weyl semimetal. Large MR (up to ~8000% at 2 K and 16 T), field-induced
We propose a new topological quantum state of matter---the two-dimensional (2D) Weyl half semimetal (WHS), which features 2D Weyl points at Fermi level belonging to a single spin channel, such that the low-energy electrons are described by fully spin
The ordinary Hall effect refers to generation of a transverse voltage upon exertion of an electric field in the presence of an out-of-plane magnetic field. While a linear Hall effect is commonly observed in systems with breaking time-reversal symmetr