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Impurities are often driven to segregate to grain boundaries, which can significantly alter a materials thermal stability and mechanical behavior. To provide a comprehensive picture of this issue, the influence of a wide variety of common nonmetal impurities (H, B, C, N, O, Si, P and S) incorporated during service or materials processing are studied using first-principles simulations, with a focus on identifying changes to the energetics and mechanical strength of a Cu $Sigma$5 (310) grain boundary. Changes to the grain boundary energy are found to be closely correlated with the covalent radii of the impurities and the volumetric deformations of polyhedra at the interface. The strengthening energies of each impurity are evaluated as a function of covalent radius and electronegativity, followed by first-principles-based tensile tests on selected impurities. The strengthening of a B-doped grain boundary comes from an enhancement of the charge density among the adjacent Cu atoms, which improves the connection between the two grains. Alternatively, the detrimental effect of O results from the reduction of charge density between the Cu atoms. This work deepens the understanding of the possible beneficial and harmful effects of impurities on grain boundaries, providing a guide for materials processing studies.
Most research on nanocrystalline alloys has been focused on planned doping of metals with other metallic elements, but nonmetallic impurities are also prevalent in the real world. In this work, we report on the combined effects of metallic dopants an
It was recently reported that segregation of Zr to grain boundaries (GB) in nanocrystalline Cu can lead to the formation of disordered intergranular films [1,2]. In this study we employ atomistic computer simulations to study how the formation of the
While it is known that alloy components can segregate to grain boundaries (GBs), and that the atomic mobility in GBs greatly exceeds the atomic mobility in the lattice, little is known about the effect of GB segregation on GB diffusion. Atomistic com
Addition of solutes is commonly used to stabilize nanocrystalline materials against grain growth. However, segregating at grain boundaries, these solutes also affect the process of dislocation nucleation from grain boundaries under applied stress. Us
We perform a systematic first-principles study of phosphorene in the presence of typical monovalent (hydrogen, fluorine) and divalent (oxygen) impurities. The results of our modeling suggest a decomposition of phosphorene into weakly bonded one-dimen