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High mobility phonon-glass semimetal $CuAgSe$ has shown promise in recent years as a potential low-temperature thermoelectric material. It exhibits reasonably strong thermoelectric performance as well as an extremely high carrier mobility, both of which are enhanced when the material is doped with Ni at the Cu sites. The exact mechanism by which these enhancements result; however, is unclear. In order to further investigate the effects of chemical substitution on the materials thermoelectric properties, we have prepared and performed various measurements on $CuAgSe$ samples doped with Co and Cr according to the following compositional formulas: $Cu_{1-x}Co_{x}AgSe$ $(x=0.02, 0.05, 0.10)$ and $Cu_{1-x}Cr_{x}AgSe$ $(x=0.02, 0.05)$. Measurements of temperature and magnetic field dependent thermal conductivity, electrical resistivity, and Seebeck coefficient will be discussed. Our results reveal a remarkable sensitivity of $CuAgSe$s thermoelectric properties to chemical doping in general as well as a particular sensitivity to specific dopants. This demonstrated tunability of $CuAgSe$s various properties furthers the case that high mobility phonon glass-semimetals are strong candidates for potential low temperature thermoelectric applications.
We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal-nonmetal transition. An anomalous regime, formed by negative values of the magnetoresist
The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1 and 3% atomic levels. Th
The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indium doped SnTe is of particular interest because, depending on the dopi
We have measured thermoelectric properties of Ta2PdX6 (X=S, Se) around room temperature using single crystal samples. We find that the power factor of Ta2PdX6 is relatively high from middle-low to room temperatures, and notably Ta2PdSe6 shows the lar
SrTiO$_3$ is a promising $n$-type oxide semiconductor for thermoelectric energy conversion. Epitaxial thin films of SrTiO$_3$ doped with both La and oxygen vacancies have been synthesized by pulsed laser deposition (PLD). The thermoelectric and galva