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Single phase nickel-cobalt-titanate thin films with a formula A1+2xTi1-xO3, where A is Ni2+,Co2+ and -0.25<x<1, were grown by pulsed laser deposition on sapphire substrates. There is a large window in which both Ni/Co ratio and x can be chosen independently. In the prototype ilmenite and corundum structures one third of the octahedra are vacant. The reported structure is obtained by filling vacant (x>0) or emptying filled (x<0) octahedra. When x = 1 all octahedra are filled. Two factors controlling the magnetism and crystal distortion are identified. First is a direct overlap between the adjacent cation d-orbitals resulting in a bond formation and magnetic interactions between the cations. This is most clearly revealed as a crystal distortion in the x approximately 0 compositions with approximately equal amounts of Ni and Co: the distortion of the x approximately 0 compound is a function of Ni/Co ratio. The second factor is x, which controls the cation shift towards a vacant octahedron. The displacement decreases and the symmetry increases with decreasing Ti content as was revealed by x-ray diffraction and Raman spectroscopy. When all octahedra are filled the cations prefer octahedron center positions. Also the number density of cations has increased by a factor of 50 percent when compared to the ilmenite structure. The number density ratios of Ni/Co cations between x=1 and x=0 compounds is 3. The Raman and x-ray diffraction data collected on samples with x = 1 or close to 1 are interpreted in terms of P63/mmc space group.
Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free f
Cobalt nitride (Co-N) thin films prepared using a reactive magnetron sputtering process by varying the relative nitrogen gas flow (pn) are studied in this work. As pn~increases, Co(N), tcn, Co$_3$N and CoN phases are formed. An incremental increase i
We synthesized bismuth - cobalt oxide doped by erbium with general formula Bi3-xErxCoO3-y. Compound has structure of delta-form bismuth oxide. Magnetic properties of the compound were measured by Faradays method using quartz scales in the temperature
The design and fabrication of materials that exhibit both semiconducting and magnetic properties for spintronics and quantum computing has proven difficult. Important starting points are high-purity thin films as well as fundamental theoretical under
The Landau theory of phase transitions of Ba0.8Sr0.2TiO3 thin film under external electric field applied in the planar geometry is developed. The interfacial van-der-Waals field Ez=1.1x10^8 V/m oriented normal to the film-substrate interface was intr