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Strontium titanate is a low-temperature, non-Bardeen-Cooper-Schrieffer superconductor that superconducts to carrier concentrations lower than in any other system and exhibits avoided ferroelectricity at low temperatures. Neither the mechanism of superconductivity in strontium titanate nor the importance of the structure and dielectric properties for the superconductivity are well understood. We studied the effects of twin structure on superconductivity in a 5.5-nm-thick layer of niobium-doped SrTiO$_{3}$ embedded in undoped SrTiO$_{3}$. We used a scanning superconducting quantum interference device susceptometer to image the local diamagnetic response of the sample as a function of temperature. We observed regions that exhibited a superconducting transition temperature $T_{c}$ $gtrsim$ 10% higher than the temperature at which the sample was fully superconducting. The pattern of these regions varied spatially in a manner characteristic of structural twin domains. Our results emphasize that the anisotropic dielectric properties of SrTiO$_{3}$ are important for its superconductivity, and need to be considered in any theory of the mechanism of the superconductivity.
Superconductivity develops in bulk doped SrTiO$_3$ and at the LaAlO$_3$/SrTiO$_3$ interface with a dome-shaped density dependence of the critical temperature $T_c$, despite different dimensionalities and geometries. We propose that the $T_c$ dome of
We report the influence on the superconducting critical temperature $T_c$ in doped SrTiO$_3$ of the substitution of the natural $^{16}$O atoms by the heavier isotope $^{18}$O. We observe that for a wide range of doping this substitution causes a stro
We show that electroplated Re films in multilayers with noble metals such as Cu, Au, and Pd have an enhanced superconducting critical temperature relative to previous methods of preparing Re. The dc resistance and magnetic susceptibility indicate a c
We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam lithography. Th
The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and TiO$_{2}$-ter