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تسجيل مستخدم جديدProperties of a rare-earth-ion-doped waveguide at sub-Kelvin temperatures for quantum signal processing
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We characterize the 795 nm $^3$H$_6$ to $^3$H$_4$ transition of Tm$^{3+}$ in a Ti$^{4+}$:LiNbO$_{3}$ waveguide at temperatures as low as 800 mK. Coherence and hyperfine population lifetimes -- up to 117 $mu$s and 2.5 hours, respectively -- exceed those at 3 K at least ten-fold, and are equivalent to those observed in a bulk Tm$^{3+}$:LiNbO$_{3}$ crystal under similar conditions. We also find a transition dipole moment that is equivalent to that of the bulk. Finally, we prepare a 0.5 GHz-bandwidth atomic frequency comb of finesse $>$2 on a vanishing background. These results demonstrate the suitability of rare-earth-doped waveguides created using industry-standard Ti-indiffusion in LiNbO$_3$ for on-chip quantum applications.
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We characterize the optical coherence and energy-level properties of the 795 nm $^3$H$_6$ to $^3$H$_4$ transition of Tm$^{3+}$ in a Ti$^{4+}$:LiNbO$_{3}$ waveguide at temperatures as low as 0.65 K. Coherence properties are measured with varied temper
ature, magnetic field, optical excitation power and wavelength, and measurement time-scale. We also investigate nuclear spin-induced hyperfine structure and population dynamics with varying magnetic field and laser excitation power. Except for accountable differences due to difference Ti$^{4+}$ and Tm$^{3+}$-doping concentrations, we find that the properties of Tm$^{3+}$:Ti$^{4+}$:LiNbO$_{3}$ produced by indiffusion doping are consistent with those of a bulk-doped Tm$^{3+}$:LiNbO$_{3}$ crystal measured under similar conditions. Our results, which complement previous work in a narrower parameter space, support using rare-earth-ions for integrated optical and quantum signal processing.
Due to inhomogeneous broadening, the absorption lines of rare-earth-ion dopands in crystals are many order of magnitudes wider than the homogeneous linewidths. Several ways have been proposed to use ions with different inhomogeneous shifts as qubit r
egisters, and to perform gate operations between such registers by means of the static dipole coupling between the ions. In this paper we show that in order to implement high-fidelity quantum gate operations by means of the static dipole interaction, we require the participating ions to be strongly coupled, and that the density of such strongly coupled registers in general scales poorly with register size. Although this is critical to previous proposals which rely on a high density of functional registers, we describe architectures and preparation strategies that will allow scalable quantum computers based on rare-earth-ion doped crystals.
By spectrally hole burning an inhomogeneously broadened ensemble of ions while applying a controlled perturbation, one can obtain spectral holes that are functionalized for maximum sensitivity to different perturbations. We propose to use such hole b
urnt structures for the dispersive optical interaction with rare-earth ion dopants whose frequencies are sensitive to crystal strain due to the bending motion of a crystal cantilever. A quantitative analysis shows that good optical sensitivity to the bending motion is obtained if a magnetic field gradient is applied across the crystal during hole burning, and that the resulting opto-mechanical coupling strength is sufficient for observing quantum features such as zero point vibrations.
We perform an investigation into the properties of Pr3+:Y2SiO5 whispering gallery mode resonators as a first step towards achieving the strong coupling regime of cavity QED with rare-earth-ion doped crystals. Direct measurement of cavity QED paramete
rs are made using photon echoes, giving good agreement with theoretical predictions. By comparing the ions at the surface of the resonator to those in the center it is determined that the physical process of making the resonator does not negatively affect the properties of the ions. Coupling between the ions and resonator is analyzed through the observation of optical bistability and normal-mode splitting.
Nano-structuring impurity-doped crystals affects the phonon density of states and thereby modifies the atomic dynamics induced by interaction with phonons. We propose the use of nano-structured materials in the form of powders or phononic bandgap cry
stals to enable or improve persistent spectral hole-burning and coherence for inhomogeneously broadened absorption lines in rare-earth-ion-doped crystals. This is crucial for applications such as ultra-precise radio-frequency spectrum analyzers and optical quantum memories. As an example, we discuss how phonon engineering can enable spectral hole burning in erbium-doped materials operating in the convenient telecommunication band, and present simulations for density of states of nano-sized powders and phononic crystals for the case of Y2SiO5, a widely-used material in current quantum memory research.
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