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Current-induced magnetization excitation is a core phenomenon for next-generation magnetic nanodevices, and has been attributed to the spin-transfer torque (STT) that originates from the transfer of the spin angular momentum between a conduction electron and a local magnetic moment through the exchange coupling. However, the same coupling can transfer not only spin but also energy, though the latter transfer mechanism has been largely ignored. Here we report on experimental evidence concerning the energy transfer in ferromagnet/heavy metal bilayers. The magnetoresistance (MR) is found to depend significantly on the current direction down to low in-plane currents, for which STT cannot play any significant role. Instead we find that the observed MR is consistent with the energy transfer mechanism through the quantum spin-flip process, which predicts short wavelength, current-direction-dependent magnon excitations in the THz frequency range. Our results unveil another aspect of current-induced magnetic excitation, and open a channel for the dc-current-induced generation of THz magnons.
When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electrodes are not aligned. Here we report that such nonequilibrium spin accu
Topological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle-resolved photoemission spectroscopy (ARP
Femtosecond laser pulses can induce ultrafast demagnetization as well as generate bursts of hot electron spin currents. In trilayer spin valves consisting of two metallic ferromagnetic layers separated by a nonmagnetic one, hot electron spin currents
Giant magnetoresistance (GMR) of sequentially evaporated Fe-Ag structures have been investigated. Direct experimental evidence is given that inserting ferromagnetic layers into a granular structure significantly enhances the magnetoresistance. The in
Optical interference is used to enhance light-matter interaction and harvest broadband light in ultrathin semiconductor absorber films on specular back-reflectors. However, the high-temperature processing in oxygen atmosphere required for oxide absor