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Diamond is a proven solid-state platform for spin-based quantum technology. The nitrogen-vacancy (NV) center in diamond has been used to realize small-scale quantum information processing (QIP) and quantum sensing under ambient conditions. A major barrier in the development of large-scale QIP in diamond is the connection of NV spin registers by a quantum bus at room temperature. Given that diamond is expected to be an ideal spin transport material, the coherent transport of spin directly between the spin registers offers a potential solution. Yet, there has been no demonstration of spin transport in diamond due to difficulties in achieving spin injection and detection via conventional methods. Here, we exploit detailed knowledge of the paramagnetic defects in diamond to identify novel mechanisms to achieve spin injection, transport and detection in diamond at room temperature. Having identified these mechanisms, we explore how they may be combined to realise an on-chip spin quantum bus.
We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into n-type Ge(001) substrates with electron densities 2e16 < n < 8e17 cm-3, and electrically detect the resulting spin accumulation using three-terminal Hanle measurements. We
The implementation of quantum networks involving quantum memories and photonic channels without the need for cryogenics would be a major technological breakthrough. Nitrogen-vacancy centers have excellent spin properties even at room temperature, but
Quantum memories provide intermediate storage of quantum information until it is needed for the next step of a quantum algorithm or a quantum communication process. Relevant figures of merit are therefore the fidelity with which the information can b
Silicon vacancies in silicon carbide have been proposed as an alternative to nitrogen vacancy centers in diamonds for spintronics and quantum technologies. An important precondition for these applications is the initialization of the qubits into a sp
Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room temperature (RT) spin transport in Si has already been achieved. However