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تسجيل مستخدم جديدIntroduction to Topological Insulators
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In this article, we will give a brief introduction to the topological insulators. We will briefly review some of the recent progresses, from both theoretical and experimental sides. In particular, we will emphasize the recent progresses achieved in China.
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We present a short pedagogical introduction to the physics of Dirac materials, restricted to graphene and two- dimensional topological insulators. We start with a brief reminder of the Dirac and Weyl equations in the particle physics context. Turning
to condensed matter systems, semimetallic graphene and various Dirac insulators are introduced, including the Haldane and the Kane-Mele topological insulators. We also discuss briefly experimental realizations in materials with strong spin-orbit coupling.
Granular conductors form an artificially engineered class of solid state materials wherein the microstructure can be tuned to mimic a wide range of otherwise inaccessible physical systems. At the same time, topological insulators (TIs) have become a
cornerstone of modern condensed matter physics as materials hosting metallic states on the surface and insulating in the bulk. However it remains to be understood how granularity affects this new and exotic phase of matter. We perform electrical transport experiments on highly granular topological insulator thin films of Bi$_2$Se$_3$ and reveal remarkable properties. We observe clear signatures of topological surface states despite granularity with distinctly different properties from conventional bulk TI systems including sharp surface state coupling-decoupling transitions, large surface state penetration depths and exotic Berry phase effects. We present a model which explains these results. Our findings illustrate that granularity can be used to engineer designer TIs, at the same time allowing easy access to the Dirac-fermion physics that is inaccessible in single crystal systems.
Topological crystalline insulators (TCIs) are insulating materials whose topological property relies on generic crystalline symmetries. Based on first-principles calculations, we study a three-dimensional (3D) crystal constructed by stacking two-dime
nsional TCI layers. Depending on the inter-layer interaction, the layered crystal can realize diverse 3D topological phases characterized by two mirror Chern numbers (MCNs) ($mu_1,mu_2$) defined on inequivalent mirror-invariant planes in the Brillouin zone. As an example, we demonstrate that new TCI phases can be realized in layered materials such as a PbSe (001) monolayer/h-BN heterostructure and can be tuned by mechanical strain. Our results shed light on the role of the MCNs on inequivalent mirror-symmetric planes in reciprocal space and open new possibilities for finding new topological materials.
We investigate in a fully quantum-mechanical manner how the many-body excitation spectrum of topological insulators is affected by the presence of long-range Coulomb interactions. In the one-dimensional Su-Schrieffer-Heeger model and its mirror-symme
tric variant strongly localized plasmonic excitations are observed which originate from topologically non-trivial single-particle states. These textit{topological plasmons} inherit some of the characteristics of their constituent topological single-particle states, but they are not equally well protected against disorder due to the admixture of non-topological bulk single-particle states in the polarization function. The strength of the effective Coulomb interactions is also shown to have strong effects on the plasmonic modes. Furthermore, we show how external modifications via dielectric screening and applied electric fields with distinct symmetries can be used to study topological plasmons, thus allowing for experimental verification of our atomistic predictions.
Detection and manipulation of electrons spins are key prerequisites for spin-based electronics or spintronics. This is usually achieved by contacting ferromagnets with metals or semiconductors, in which the relaxation of spins due to spin-orbit coupl
ing limits both the efficiency and the length scale. In topological insulator materials, on the contrary, the spin-orbit coupling is so strong that the spin direction uniquely determines the current direction, which allows us to conceive a whole new scheme for spin detection and manipulation. Nevertheless, even the most basic process, the spin injection into a topological insulator from a ferromagnet, has not yet been demonstrated. Here we report successful spin injection into the surface states of topological insulators by using a spin pumping technique. By measuring the voltage that shows up across the samples as a result of spin pumping, we demonstrate that a spin-electricity conversion effect takes place in the surface states of bulk-insulating topological insulators Bi1.5Sb0.5Te1.7Se1.3 and Sn-doped Bi2Te2Se. In this process, due to the two-dimensional nature of the surface state, there is no spin current along the perpendicular direction. Hence, the mechanism of this phenomenon is different from the inverse spin Hall effect and even predicts perfect conversion between spin and electricity at room temperature. The present results reveal a great advantage of topological insulators as inborn spintronics devices.
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