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We demonstrate that ferromagnetic and antiferromagnetic excitations can be triggered by the dynamical spin accumulations induced by the bulk and surface contributions of the spin Hall effect. Due to the spin-orbit interaction, a time-dependent spin density is generated by an oscillatory electric field applied parallel to the atomic planes of Fe/W(110) multilayers. For symmetric trilayers of Fe/W/Fe in which the Fe layers are ferromagnetically coupled, we demonstrate that only the collective out-of-phase precession mode is excited, while the uniform (in-phase) mode remains silent. When they are antiferromagnetically coupled, the oscillatory electric field sets the Fe magnetizations into elliptical precession motions with opposite angular velocities. The manipulation of different collective spin-wave dynamical modes through the engineering of the multilayers and their thicknesses may be used to develop ultrafast spintronics devices. Our work provides a general framework that probes the realistic responses of materials in the time or frequency domain.
A magnetic bimeron is a topologically non-trivial spin texture carrying an integer topological charge, which can be regarded as the counterpart of skyrmion in easy-plane magnets. The controllable creation and manipulation of bimerons are crucial for
Topological spin textures can be found in both two-dimensional and three-dimensional nanostructures, which are of great importance to advanced spintronic applications. Here we report the current-induced skyrmion tube dynamics in three-dimensional syn
Experimental results of rectification of a constant wave radio frequency (RF) current flowing in a single-layered ferromagnetic wire are presented. We show that a detailed external magnetic field dependence of the RF current induced a direct-current
Current-induced dynamics in spin valves including composite free layer with antiferromagnetic interlayer exchange coupling is studied theoretically within the diffusive transport regime. We show that current-induced dynamics of a synthetic antiferrom
There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent stu