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We present the first systematic study of the stability of the structure and electrical properties of FeCl$_3$ intercalated few-layer graphene to high levels of humidity and high temperature. Complementary experimental techniques such as electrical transport, high resolution transmission electron microscopy and Raman spectroscopy conclusively demonstrate the unforeseen stability of this transparent conductor to a relative humidity up to $100 %$ at room temperature for 25 days, to a temperature up to $150,^circ$C in atmosphere and up to a temperature as high as $620,^circ$C in vacuum, that is more than twice higher than the temperature at which the intercalation is conducted. The stability of FeCl$_3$ intercalated few-layer graphene together with its unique values of low square resistance and high optical transparency, makes this material an attractive transparent conductor in future flexible electronic applications.
Macroscopic arrays of highly crystalline nanocarbons offer the possibility of modifying the electronic structure of their low dimensional constituents, for example through doping, and studying the resulting collective bulk behaviour. Insertion of ele
The inter-Landau level transitions observed in far-infrared transmission experiments on few-layer graphene samples show a behaviour characteristic of the linear dispersion expected in graphene. This behaviour persists in relatively thick samples, and
Two-dimensional (2D) antimony (Sb, antimonene) recently attracted interest due to its peculiar electronic properties and its suitability as anode material in next generation batteries. Sb however exhibits a large polymorphic/allotropic structural div
The moire superstructure of graphene grown on metals can drive the assembly of molecular architectures, as iron-phthalocyanine (FePc) molecules, allowing for the production of artificial molecular configurations. A detailed analysis of the Gr/Co inte
By inserting a SrZrO$_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO$_3$ films. A room temperature mo