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تسجيل مستخدم جديدNonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band
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This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN substrates. The quantum wells were designed to contain two confined electronic levels, decoupled from the neighboring wells. Structural analysis reveals flat and regular quantum wells in the two perpendicular inplane directions, with high-resolution images showing inhomogeneities of the Al composition in the barriers along the growth axis. We do not observe extended structural defects introduced by the epitaxial process. Low-temperature intersubband absorption from 1.5 to 9 THz is demonstrated, covering part of the 7 to 10 THz band forbidden to GaAs-based technologies.
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Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an inherently existin
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We have theoretically studied exciton states and photoluminescence spectra of strained wurtzite AlGaN/GaN quantum-well heterostructures. The electron and hole energy spectra are obtained by numerically solving the Schrodinger equation, both for a sin
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Using high magnetic fields up to 60 T, we report magneto-transport and photoluminescence (PL) studies of a two-dimensional electron gas (2DEG) in a GaN/AlGaN heterojunction grown by molecular-beam epitaxy. Transport measurements demonstrate that the
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Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the absorption
study, the sample is heated in increments up to $400^circ$C. The self-consistent Schrodinger-Poisson modeling includes temperature effects of the band-gap and the influence of thermal expansion on the piezoelectric field. We find that the intersubband absorption energy decreases only by $sim 6$ meV at $400^circ$C relative to its room temperature value.
The science and applications of electronics and optoelectronics have been driven for decades by progress in growth of semiconducting heterostructures. Many applications in the infrared and terahertz frequency range exploit transitions between quantiz
ed states in semiconductor quantum wells (intersubband transitions). However, current quantum well devices are limited in functionality and versatility by diffusive interfaces and the requirement of lattice-matched growth conditions. Here, we introduce the concept of intersubband transitions in van der Waals quantum wells and report their first experimental observation. Van der Waals quantum wells are naturally formed by two-dimensional (2D) materials and hold unexplored potential to overcome the aforementioned limitations: They form atomically sharp interfaces and can easily be combined into heterostructures without lattice-matching restrictions. We employ near-field local probing to spectrally resolve and electrostatically control the intersubband absorption with unprecedented nanometer-scale spatial resolution. This work enables exploiting intersubband transitions with unmatched design freedom and individual electronic and optical control suitable for photodetectors, LEDs and lasers.
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