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We analyze spin-dependent carrier dynamics due to incoherent electron-phonon scattering, which is commonly referred to as Elliott-Yafet (EY) spin-relaxation mechanism. For this mechanism one usually distinguishes two contributions: (1) from the electrostatic interaction together with spin-mixing in the wave functions, which is often called the Elliott contribution, and (2) the phonon-modulated spin-orbit interaction, which is often called the Yafet or Overhauser contribution. By computing the reduced electronic density matrix, we improve Yafets original calculation, which is not valid for pronounced spin mixing as it equates the pseudo-spin polarization with the spin polarization. The important novel quantity in our calculation is a torque operator that determines the spin dynamics. The contribution (1) to this torque vanishes exactly. From this general result, we derive a modified expression for the Elliott-Yafet spin relaxation time.
We extend our recent result for the spin-relaxation time due to acoustic electron-phonon scattering in degenerate bands with spin mixing [New J. Phys. 18, 023012 (2015)] to include interactions with optical phonons, and present a numerical evaluation
The temperature dependence of the electron spin relaxation time in MgB2 is anomalous as it does not follow the temperature dependence of the resistivity above 150 K, it has a maximum around 400 K, and it decreases for higher temperatures. This violat
We theoretically investigate a manipulation method of nonequilibrium spin accumulation in the paramagnetic normal metal of a spin pumping system, by using the spin precession motion combined with the spin diffusion transport. We demonstrate based on
The nonlocal transport of thermally generated magnons not only unveils the underlying mechanism of the spin Seebeck effect, but also allows for the extraction of the magnon relaxation length ($lambda_m$) in a magnetic material, the average distance o
We have studied spin dephasing in a high-mobility two-dimensional electron system (2DES), confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the