ترغب بنشر مسار تعليمي؟ اضغط هنا

Surface properties of atomically flat poly-crystalline SrTiO3

124   0   0.0 ( 0 )
 نشر من قبل Sungmin Woo
 تاريخ النشر 2015
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Comparison between single- and the poly-crystalline structures provides essential information on the role of long-range translational symmetry and grain boundaries. In particular, by comparing single- and poly-crystalline transition metal oxides (TMOs), one can study intriguing physical phenomena such as electronic and ionic conduction at the grain boundaries, phonon propagation, and various domain properties. In order to make an accurate comparison, however, both single- and poly-crystalline samples should have the same quality, e.g., stoichiometry, crystallinity, thickness, etc. Here, by studying the surface properties of atomically flat poly-crystalline SrTiO3 (STO), we propose an approach to simultaneously fabricate both single- and poly-crystalline epitaxial TMO thin films on STO substrates. In order to grow TMOs epitaxially with atomic precision, an atomically flat, single-terminated surface of the substrate is a prerequisite. We first examined (100), (110), and (111) oriented single-crystalline STO surfaces, which required different annealing conditions to achieve atomically flat surfaces, depending on the surface energy. A poly-crystalline STO surface was then prepared at the optimum condition for which all the domains with different crystallographic orientations could be successfully flattened. Based on our atomically flat poly-crystalline STO substrates, we envision expansion of the studies regarding theTMOdomains and grain boundaries.



قيم البحث

اقرأ أيضاً

Silicon (Si) is one of the most extensively studied materials owing to its significance to semiconductor science and technology. While efforts to find a new three-dimensional (3D) Si crystal with unusual properties have made some progress, its two-di mensional (2D) phases have not yet been explored as much. Here, based on a newly developed systematic $ab$ $initio$ materials searching strategy, we report a series of novel 2D Si crystals with unprecedented structural and electronic properties. The new structures exhibit perfectly planar outermost surface layers of a distorted hexagonal network with their thicknesses varying with the atomic arrangement inside. Dramatic changes in electronic properties ranging from semimetal to semiconducting with indirect energy gaps and even to one with direct energy gaps are realized by varying thickness as well as by surface oxidation. Our predicted 2D Si crystals with flat surfaces and tunable electronic properties will shed light on the development of silicon-based 2D electronics technology.
113 - Z. Q. Liu , Z. Huang , W. M. Lu 2012
The surface termination of (100)-oriented LaAlO3 (LAO) single crystals was examined by atomic force microscopy and optimized to produce a single-terminated atomically flat surface by annealing. Then the atomically flat STO film was achieved on a sing le-terminated LAO substrate, which is expected to be similar to the n-type interface of two-dimensional electron gas (2DEG), i.e., (LaO)-(TiO2). Particularly, that can serve as a mirror structure for the typical 2DEG heterostructure to further clarify the origin of 2DEG. This newly developed interface was determined to be highly insulating. Additionally, this study demonstrates an approach to achieve atomically flat film growth based on LAO substrates.
Typical device architectures in polymer-based optoelectronic devices, such as field effect transistors organic light emitting diodes and photovoltaic cells include sub-100 nm semiconducting polymer thin-film active layers, whose microstructure is lik ely to be subject to finite-size effects. The aim of this study was to investigate effect of the two-dimensional spatial confinement on the internal structure of the semiconducting polymer poly(9,9-dioctylfluorene) (PFO). PFO melts were confined inside the cylindrical nanopores of anodic aluminium oxide (AAO) templates and crystallized via two crystallization strategies, namely, in the presence or in the absence of a surface bulk reservoir located at the template surface. We show that highly textured semiconducting nanowires with tuneable crystal orientation can be thus produced. Moreover, our results indicate that employing the appropriate crystallization conditions extended-chain crystals can be formed in confinement. The results presented here demonstrate the simple fabrication and crystal engineering of ordered arrays of PFO nanowires; a system with potential applications in devices where anisotropic optical properties are required, such as polarized electroluminescence, waveguiding, optical switching, lasing, etc.
The surface structure of SrTiO3(001) thin films homoepitaxially grown by PLD in step-flow mode was characterized using low temperature STM. It was found that one-dimensional (1D) TiOx-based nanostructures were formed on the thin film surface and thei r density increased with increasing thin film thickness. Most of the 1D nanostructures disappeared after a post-deposition annealing, indicating that this structure is metastable due to the nonequilibrium growth mode. The resulting surface after annealing exhibited similar features to that of a thinner film, having a domain structure with (2x1) and (1x2) reconstructions, but with fewer oxygen-vacancy-type defects. These results imply that the step-flow growth is likely to produce TiOx-rich surface and Ti deficiencies in the film. By the post-deposition annealing, the rich TiOx would diffuse from the surface into the film to compensate defects associated with Ti vacancies and oxygen vacancies, resulting in the stable surface structure with fewer oxygen vacancies. Thus, STM measurements can provide us with a microscopic picture of surface stoichiometry of thin films originating in the dynamics of the growth process, and can present a new approach for designing functional oxide films.
Deep subwavelength integration of high-definition plasmonic nanostructures is of key importance for the development of future optical nanocircuitry for high-speed communication, quantum computation and lab-on-a-chip applications. So far the experimen tal realization of proposed extended plasmonic networks consisting of multiple functional elements remains challenging, mainly due to the multi-crystallinity of commonly used thermally evaporated gold layers. Resulting structural imperfections in individual circuit elements will drastically reduce the yield of functional integrated nanocircuits. Here we demonstrate the use of very large (>100 micron^2) but thin (<80 nm) chemically grown single-crystalline gold flakes, which, after immobilization, serve as an ideal basis for focused-ion beam milling and other top-down nanofabrication techniques on any desired substrate. Using this methodology we obtain high-definition ultrasmooth gold nanostructures with superior optical properties and reproducible nano-sized features over micrometer length scales. Our approach provides a possible solution to overcome the current fabrication bottleneck and to realize high-definition plasmonic nanocircuitry.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا