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We present a direct spectroscopic observation of a shallow hydrogen-like muonium state in SrTiO$_3$ which confirms the theoretical prediction that interstitial hydrogen may act as a shallow donor in this material. The formation of this muonium state is temperature dependent and appears below $sim 70$ K. From the temperature dependence we estimate an activation energy of $sim 50$ meV in the bulk and $sim 23$ meV near the free surface. The field and directional dependence of the muonium precession frequencies further supports the shallow impurity state with a rare example of a fully anisotropic hyperfine tensor. From these measurements we determine the strength of the hyperfine interaction and propose that the muon occupies an interstitial site near the face of the oxygen octahedron in SrTiO$_3$. The observed shallow donor state provides new insight for tailoring the electronic and optical properties of SrTiO$_{3}$-based oxide interface systems.
The charge dynamics of hydrogen-like centers formed by the implantation of energetic (4 MeV) muons in semi-insulating GaAs have been studied by muon spin resonance in electric fields. The results point to the significant role of deep hole traps in th
The hyperfine structure of the interstitial muonium (Mu) center in rutile (TiO$_2$, weakly $n$-type) has been identified by means of muon spin rotation technique. The angle-resolved hyperfine parameter has a tetragonal anisotropy within the $ab$ plan
We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at 200 K, reverts to a new (root-3xroot-3)R30 pha
There are two prerequisites for understanding high-temperature (high-T$_c$) superconductivity: identifying the pairing interaction and a correct description of the normal state from which superconductivity emerges. The nature of the normal state of i
Surface photovoltage (SPV) spectroscopy, which is a versatile method to analyze the energetic distribution of electronic defect states at surfaces and interfaces of wide-bandgap semiconductor (hetero-)structures, is applied to comparatively investiga