ﻻ يوجد ملخص باللغة العربية
Modeling nanoscale devices quantum mechanically is a computationally challenging problem where new methods to solve the underlying equations are in a dire need. In this paper, we present an approach to calculate the charge density in nanoscale devices, within the context of the non equilibrium Greens function approach. Our approach exploits recent advances in using an established graph partitioning approach. The developed method has the capability to handle open boundary conditions that are represented by full self energy matrices required for realistic modeling of nanoscale devices. Our method to calculate the electron density has a reduced complexity compared to the established recursive Greens function approach. As an example, we apply our algorithm to a quantum well superlattice and a carbon nanotube, which are represented by a continuum and tight binding Hamiltonian respectively, and demonstrate significant speed up over the recursive method.
The Hierarchical Schur Complement method (HSC), and the HSC-extension, have significantly accelerated the evaluation of the retarded Greens function, particularly the lesser Greens function, for two-dimensional nanoscale devices. In this work, the HS
Multiscale models allow for the treatment of complex phenomena involving different scales, such as remodeling and growth of tissues, muscular activation, and cardiac electrophysiology. Numerous numerical approaches have been developed to simulate mul
First-principles calculations combining density-functional theory and continuum solvation models enable realistic theoretical modeling and design of electrochemical systems. When a reaction proceeds in such systems, the number of electrons in the por
Motivated by applications in quantum chemistry and solid state physics, we apply general results from approximation theory and matrix analysis to the study of the decay properties of spectral projectors associated with large and sparse Hermitian matr
We report on charge transport and current fluctuations in a single bacteriorhodpsin protein in a wide range of applied voltages covering direct and injection tunnelling regimes. The satisfactory agreement between theory and available experiments vali