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We theoretically investigate second harmonic generation in extremely narrow, sub-wavelength semiconductor and dielectric waveguides. We discuss a novel guiding mechanism characterized by the inhibition of diffraction and the suppression of cut-off limits in the context of a light trapping phenomenon that sets in under conditions of general phase and group velocity mismatch between the fundamental and the generated harmonic.
We demonstrate enhanced second harmonic generation in a gallium phosphide photonic crystal waveguide with a measured external conversion efficiency of 5$times10^{-7}$/W. Our results are promising for frequency conversion of on-chip integrated emitter
Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the intense non
Prospective integrated quantum optical technologies will combine nonlinear optics and components requiring cryogenic operating temperatures. Despite the prevalence of integrated platforms exploiting $chi^{(2)}$-nonlinearities for quantum optics, for
We investigate type I second harmonic generation in III-V semiconductor wire waveguides aligned with a crystallographic axis. In this direction, because of the single nonzero tensor element of III-V semiconductors, only frequency conversion by mixing
Optical waveguides made from periodically poled materials provide high confinement of light and enable the generation of new wavelengths via quasi-phase-matching, making them a key platform for nonlinear optics and photonics. However, such devices ar