اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدExciton Mott transition in Si Revealed by Terahertz Spectroscopy
118
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Exciton Mott transition in Si is investigated by using terahertz time-domain spectroscopy. The excitonic correlation as manifested by the 1s-2p resonance is observed above the Mott density. The scattering rate of charge carriers is prominently enhanced at the proximity of Mott density, which is attributed to the non-vanishing exciton correlation in the metallic electron-hole plasma. Concomitantly, the signature of plasmon-exciton coupling is observed in the loss function spectra.
قيم البحث
اقرأ أيضاً
Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be radically diffe
rent from that characterized by free electrons in conventional metals. We report on the electronic properties of a prototypical correlated insulator vanadium dioxide (VO2) in which the metallic state can be induced by increasing temperature. Scanning near-field infrared microscopy allows us to directly image nano-scale metallic puddles that appear at the onset of the insulator-to-metal transition. In combination with far-field infrared spectroscopy, the data reveal the Mott transition with divergent quasiparticle mass in the metallic puddles. The experimental approach employed here sets the stage for investigations of charge dynamics on the nanoscale in other inhomogeneous correlated electron systems.
Understanding the transfer of spin angular momentum is essential in modern magnetism research. A model case is the generation of magnons in magnetic insulators by heating an adjacent metal film. Here, we reveal the initial steps of this spin Seebeck
effect with <27fs time resolution using terahertz spectroscopy on bilayers of ferrimagnetic yttrium-iron garnet and platinum. Upon exciting the metal with an infrared laser pulse, a spin Seebeck current $j_textrm{s}$ arises on the same ~100fs time scale on which the metal electrons thermalize. This observation highlights that efficient spin transfer critically relies on carrier multiplication and is driven by conduction electrons scattering off the metal-insulator interface. Analytical modeling shows that the electrons dynamics are almost instantaneously imprinted onto $j_textrm{s}$ because their spins have a correlation time of only ~4fs and deflect the ferrimagnetic moments without inertia. Applications in material characterization, interface probing, spin-noise spectroscopy and terahertz spin pumping emerge.
The Mott transition from a dipolar excitonic liquid to an electron-hole plasma is demonstrated in a wide GaN/(Al,Ga)N quantum well at $T=7$K by means of spatially-resolved magneto-photoluminescence spectroscopy. Increasing optical excitation density
we drive the system from the excitonic state, characterized by a diamagnetic behavior and thus a quadratic energy dependence on the magnetic field, to the unbound electron-hole state, characterized by a linear shift of the emission energy with the magnetic field. The complexity of the system requires to take into account both the density-dependence of the exciton binding energy and the exciton-exciton interaction and correlation energy that are of the same order of magnitude. We estimate the carrier density at Mott transition as $n_mathrm{Mott}approx 2times 10^{11}$cm$^{-2}$ and address the role played by excitonic correlations in this process. Our results strongly rely on the spatial resolution of the photoluminescence and the assessment of the carrier transport. We show, that in contrast to GaAs/(Al,Ga)As systems, where transport of dipolar magnetoexcitons is strongly quenched by the magnetic field due to exciton mass enhancement, in GaN/(Al,Ga)N the band parameters are such that the transport is preserved up to $9$T.
Intense light-matter interactions and unique structural and electrical properties make Van der Waals heterostructures composed by Graphene (Gr) and monolayer transition metal dichalcogenides (TMD) promising building blocks for tunnelling transistors,
flexible electronics, as well as optoelectronic devices, including photodetectors, photovoltaics and QLEDs, bright and narrow-line emitters using minimal amounts of active absorber material. The performance of such devices is critically ruled by interlayer interactions which are still poorly understood in many respects. Specifically, two classes of coupling mechanisms have been proposed: charge transfer (CT) and energy transfer (ET), but their relative efficiency and the underlying physics is an open question. Here, building on a time resolved Raman scattering experiment, we determine the electronic temperature profile of Gr in response to TMD photo-excitation, tracking the picosecond dynamics of the G and 2D bands. Compelling evidence for a dominant role ET process accomplished within a characteristic time of ~ 3 ps is provided. Our results suggest the existence of an intermediate process between the observed picosecond ET and the generation of a net charge underlying the slower electric signals detected in optoelectronic applications.
High-field magneto-optical spectroscopy was conducted on highly-selected chiral (6,5) specific single-walled carbon nanotubes. Spectra of phonon sidebands in both 1st and 2nd sub-bands were observed to be unchanged by the application of an external m
agnetic field up to 52 T. Our analyses led to the conclusion that both phonon sidebands in respective sub-band originate from the dark K-momentum singlet (D-K-S) excitons. Moreover, while the relative ordering between the bandedge bright exciton and its zero-momentum anti-bonding counterpart was found to be opposite for the 1st and 2nd sub-bands, the relative ordering between the D-K-S exciton and the band-edge bright exciton was clarified to be the same for both sub-bands. Energy of these D-K-S excitons was estimated to be ~ 21.5 and ~ 37.3 meV above the band-edge bright exciton for the 1st and 2nd sub-bands, respectively.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
