اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدDensity effect on critical current density and flux pinning properties of polycrystalline SmFeAsO1-xFx superconductor
130
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
A series of polycrystalline SmFeAs1-xOx bulks was prepared to systematically investigate the influence of sample density on flux pinning properties. Different sample densities were achieved by controlling the pelletizing pressure. The superconducting volume fraction, the critical current densities Jcm and the flux pinning force densities Fp were estimated from the magnetization measurements. Experimental results manifest that: (1) the superconducting volume fraction decreases with the decreasing of sample density. (2) The Jcm values have the similar trend except for the sample with very high density may due to different connectivity and pinning mechanism. Moreover, The Jcm(B) curve develops a peak effect at approximately the same field at which the high-density sample shows a kink. (3) The Fp(B) curve of the high-density sample shows a low-field peak and a high-field peak at several temperatures, which can be explained by improved intergranular current, while only one peak can be observed in Fp(B) of the low-density samples. Based on the scaling behaviour of flux pinning force densities, the main intragranular pinning is normal point pinning.
قيم البحث
اقرأ أيضاً
Doping of MgB2 by nano-SiC and its potential for improvement of flux pinning was studied for MgB2-x(SiC)x/2 with x = 0, 0.2 and 0.3 and a 10wt% nano-SiC doped MgB2 samples. Co-substitution of B by Si and C counterbalanced the effects of single-elemen
t doping, decreasing Tc by only 1.5K, introducing pinning centres effective at high fields and temperatures and enhancing Jc and Hirr significantly. Compared to the non-doped sample, Jc for the 10wt% doped sample increased by a factor of 32 at 5K and 8T, 42 at 20K and 5T, and 14 at 30K and 2T. At 20K, which is considered to be a benchmark operating temperature for MgB2, the best Jc for the doped sample was 2.4x10^5A/cm2 at 2T, which is comparable to Jc of the best Ag/Bi-2223 tapes. At 20K and 4T, Jc was 36,000A/cm2, which was twice as high as for the best MgB2 thin films and an order of magnitude higher than for the best Fe/MgB2 tapes. Because of such high performance, it is anticipated that the future MgB2 conductors will be made using the formula of MgBxSiyCz instead of the pure MgB2.
We report the results from resistivity and magnetic measurements on polycrystalline Ce oxypnictide (CeFeAsO1-xFx) samples where x spans from 0.13 to 0.25. We find that the orbital limiting field is as high as 150 T and it systematically decreases wit
h increasing doping. The Maki parameter is greater than one across the phase diagram and the large Maki parameter suggests that orbital and Pauli limiting effects contribute to the upper critical field. The broadening of the superconducting transition in the resistivity data was interpreted using the thermally activated flux flow (TAFF) model where we find that the TAFF activation energy, U0(B), is proportional to B^{-(gamma)} from 1 T to high fields, and (gamma) does not significantly change with doping. However, U0 and the superconducting critical current, Jc, are peaked in the mid-doping region (x = 0.15 to x = 0.20), and not in the low (x < 0.15) or high doping (x > 0.20) regions. Furthermore, U0 is correlated with Jc and follows the two fluid model for granular samples.
Polycrystalline La2-xPrxCa2xBa2Cu4+2xOz (LPCaBCO) compounds with x = 0.1 - 0.5 were synthesized by solid-state reaction method and studied by room temperature X-ray diffraction, dc resistivity, dc magnetization and iodometry. The superconducting tran
sition temperatures in these tetragonal triple perovskite compounds increases from 32 to 62 K (Tconset values) with increasing dopant concentration. The mixing of rare earth La3+ and Pr3+/4+ ions at rare earth site (La3+) along with substitution of divalent Ca2+ results in the shrinkage of unit cell volume. The contraction of unit cell volume due to larger ion being substituted by smaller ions, gives rise to creation of pinning centers in the unit cell leading to increase in critical current density and flux pinning
SmFeAsO1-xFx tapes were prepared using three kinds of starting materials. It shows that the starting materials have an obvious effect on the impurity phases in final superconducting tapes. Compared with the other samples, the samples fabricated by Sm
As, FeO, Fe2As, and SmF3 have the smallest arsenide impurity phase and voids. As a result, these samples possess much denser structure and better grain connectivity. Moreover, among the three kinds of samples fabricated in this work, this kind of sample has the highest zero-resistivity temperature ~40 K and largest critical current density ~4600 A/cm^2 in self-field at 4.2 K. This is the highest Jc values reported so far for SmFeAsO1-xFx wires and tapes.
We investigated the effect of SiC nano-particle doping on the crystal lattice structure, critical temperature T_c, critical current density J_c, and flux pinning in MgB_2 superconductor. A series of MgB_{2-x}(SiC)_{x/2} samples with x = 0 to 1.0 were
fabricated using in-situ reaction process. The contraction of the lattice and depression of T_c with increasing SiC doping level remained rather small due to the counter-balanced effect of Si and C co-doping. The high level Si and C co-doping allowed the creation of intra-grain defects and highly dispersed nano-inclusions within the grains which can act as effective pinning centers for vortices, improving J_c behavior as a function of the applied magnetic field. The enhanced pinning is mainly attributable to the substitution-induced defects and a local structure fluctuations within grains. A pinning mechanism is proposed to account for different contributions of different defects in MgB_{2-x}(SiC)_{x/2} superconductors.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
