ترغب بنشر مسار تعليمي؟ اضغط هنا

Influence of the Surface Structure and Vibration Mode on the Resistivity of Cu Films

125   0   0.0 ( 0 )
 نشر من قبل Yani Zhao
 تاريخ النشر 2011
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The influence of the surface structure and vibration mode on the resistivity of Cu films and the corresponding size effect are investigated. The temperature dependent conductivities of the films with different surface morphologies are calculated by the algorithm based upon the tight-binding linear muffin-tin orbital method and the Greens function technique. The thermal effect is introduced by setting the atomic displacements according to the Gaussian distribution with the mean-square amplitude estimated by the Debye model. The result shows that the surface atomic vibration contributes significantly to the resistivity of the systems. Comparing the conductivities for three different vibration modes, it is suggested that freezing the surface vibration is necessary for practical applications to reduce the resistivity induced by the surface electron-phonon scattering.



قيم البحث

اقرأ أيضاً

We calculate the conductance spectra of a Co atom adsorbed on Cu(111), considering the Co $3d$ orbitals within a correlated multiple configurations model interacting through the substrate band with the Co $4s$ orbital, which is treated in a mean-fiel d like approximation. By symmetry, only the $d_{z^2}$ orbital couples with the $s$ orbital through the Cu bands, and the interference between both conduction channels introduces a zero-bias anomaly in the conductance spectra. We find that, while the Kondo resonance is mainly determined by the interaction of the Co $d$ orbitals with the bulk states of the Cu(111) surface, a proper description of the contribution given by the coupling with the localized surface states to the Anderson widths is crucial to describe the interference line shape. We find that the coupling of the Co $4s$ orbital with the Shockley surface states is responsible of two main features observed in the measured conductance spectra, the dip shape around the Fermi energy and the resonance structure at the surface state low band edge.
Compacted pellets of nanocrystalline nickel (NC-Ni) of average particle size ranging from 18 to 33 nm were prepared using a variety of surfactants. They were characterized well and were studied on the influence of the surfactants on the electrical re sistivity and thermopower in the temperature range 5 to 300 K. It was found that the type of the surfactant used dominates over the average particle size in their electrical transport and the detail transport behaviors have been discussed. Moreover, the observed thermopower and resistivity features were contrasting compared to what are normally seen in the well-known materials. They are interpreted as indicative of attractive features these surfactants for the design of nanostructured thermoelectric materials with enhanced thermoelectric figure of merits.
Electronic structures for InxGa1-xAs nanowires with [100], [110], and [111] orientations and critical dimensions of approximately 2 nm are treated within the framework of density functional theory. Explicit band structures are calculated and properti es relevant to nanoelectronic design are extracted including band gaps, effective masses, and density of states. The properties of these III-V nanowires are compared to silicon nanowires of comparable dimensions as a reference system. In nonpolar semiconductors, quantum confinement and surface chemistry are known to play a key role in the determination of nanowire electronic structure. InxGa1-xAs nanowires have in addition effects due to alloy stoichiometry on the cation sublattice and due to the polar nature of the cleaved nanowire surfaces. The impact of these additional factors on the electronic structure for these polar semiconductor nanowires is shown to be significant and necessary for accurate treatment of electronic structure properties.
We measured the response of the surface state spectrum of epitaxial Sb2Te3 thin films to applied gate electric fields by low temperature scanning tunneling microscopy. The gate dependent shift of the Fermi level and the screening effect from bulk car riers vary as a function of film thickness. We observed a gap opening at the Dirac point for films thinner than four quintuple layers, due to the coupling of the top and bottom surfaces. Moreover, the top surface state band gap of the three quintuple layer films was found to be tunable by back gate, indicating the possibility of observing a topological phase transition in this system. Our results are well explained by an effective model of 3D topological insulator thin films with structure inversion asymmetry, indicating that three quintuple layer Sb2Te3 films are topologically nontrivial and belong to the quantum spin Hall insulator class.
Charged domain walls form spontaneously in Cu-Cl boracite on cooling through the phase transition. These walls exhibit changed conductivity compared to the bulk and motion consistent with the existence of negative capacitance. Here, we present the di electric permittivity and DC resistivity of bulk Cu-Cl boracite as a function of temperature (-140 {deg}C to 150 {deg}C) and frequency (1 mHz to 10 MHz). The thermal behaviour of the two observed dielectric relaxations and the DC resistivity is discussed. We propose that the relaxations can be explained by the existence of point defects, most likely local complexes created by a change of valence of Cu and accompanying oxygen vacancies. In addition, the sudden change in resistivity seen at the phase transition suggests that conductive domain walls contribute significantly to the conductivity in the ferroelectric phase.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا