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The influence of the surface structure and vibration mode on the resistivity of Cu films and the corresponding size effect are investigated. The temperature dependent conductivities of the films with different surface morphologies are calculated by the algorithm based upon the tight-binding linear muffin-tin orbital method and the Greens function technique. The thermal effect is introduced by setting the atomic displacements according to the Gaussian distribution with the mean-square amplitude estimated by the Debye model. The result shows that the surface atomic vibration contributes significantly to the resistivity of the systems. Comparing the conductivities for three different vibration modes, it is suggested that freezing the surface vibration is necessary for practical applications to reduce the resistivity induced by the surface electron-phonon scattering.
We calculate the conductance spectra of a Co atom adsorbed on Cu(111), considering the Co $3d$ orbitals within a correlated multiple configurations model interacting through the substrate band with the Co $4s$ orbital, which is treated in a mean-fiel
Compacted pellets of nanocrystalline nickel (NC-Ni) of average particle size ranging from 18 to 33 nm were prepared using a variety of surfactants. They were characterized well and were studied on the influence of the surfactants on the electrical re
Electronic structures for InxGa1-xAs nanowires with [100], [110], and [111] orientations and critical dimensions of approximately 2 nm are treated within the framework of density functional theory. Explicit band structures are calculated and properti
We measured the response of the surface state spectrum of epitaxial Sb2Te3 thin films to applied gate electric fields by low temperature scanning tunneling microscopy. The gate dependent shift of the Fermi level and the screening effect from bulk car
Charged domain walls form spontaneously in Cu-Cl boracite on cooling through the phase transition. These walls exhibit changed conductivity compared to the bulk and motion consistent with the existence of negative capacitance. Here, we present the di