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We have prepared iron microwires in a combination of focused electron beam induced deposition (FEBID) and autocatalytic growth from the iron pentacarbonyl, Fe(CO)5, precursor gas under UHV conditions. The electrical transport properties of the microwires were investigated and it was found that the temperature dependence of the longitudinal resistivity (rhoxx) shows a typical metallic behaviour with a room temperature value of about 88 micro{Omega} cm. In order to investigate the magnetotransport properties we have measured the isothermal Hall-resistivities in the range between 4.2 K and 260 K. From these measurements positive values for the ordinary and the anomalous Hall coefficients were derived. The relation between anomalous Hall resistivity (rhoAN) and longitudinal resistivity is quadratic, rhoAN rho^2 xx, revealing an intrinsic origin of the anomalous Hall effect. Finally, at low temperature in the transversal geometry a negative magnetoresistance of about 0.2 % was measured.
We demonstrate the use of individual magnetic nanowires (NWs), grown by focused electron beam induced deposition (FEBID), as scanning magnetic force sensors. Measurements of their mechanical susceptibility, thermal motion, and magnetic response show
Nanogranular material systems are promising for a variety of applications in research and development. Their physical properties are often determined by grain sizes, shapes, mutual distances and by the chemistry of the embedding matrix With focused e
In the majority of cases nanostructures prepared by focused electron beam induced deposition (FEBID) employing an organometallic precursor contain predominantly carbon-based ligand dissociation products. This is unfortunate with regard to using this
This work describes morphological and crystalline properties of the InAs islands grown on templates created by focused ion beam (FIB) on indium phosphide (InP) substrates. Regular arrangements of shallow holes are created on the InP (001) surfaces, a
Focused electron beam induced deposition (FEBID) is a direct-write method for the fabrication of nanostructures whose lateral resolution rivals that of advanced electron lithography but is in addition capable of creating complex three-dimensional nan