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A quantitative mathematical model for the critical thickness of strained epitaxial metal films is presented, at which the magnetic moment experiences a reorientation from in-plane to perpendicular magnetic anisotropy. The model is based on the minimum of the magnetic anisotropy energy with respect to the orientation of the magnetic moment of the film. Magnetic anisotropy energies are taken as the sum of shape anisotropy, magnetocrystalline anisotropy and magnetoelastic anisotropy, the two latter ones being present as constant surface and variable volume contributions. Other than anisotropy materials constants, readily available from literature, only information about the strain in the films for the determination of the magnetoelastic anisotropy energy is required. Application of the epitaxial Bain path allows to express the strain in the film in terms of substrate lattice constant and film lattice parameter, and thus to obtain an approximate closed expression for the reorientation thickness in terms of lattice mismatch. The model can predict the critical spin reorientation transition thickness with surprising accuracy.
Thin films of the ferromagnetic metal SrRuO3 (SRO) show a varying easy magnetization axis depending on the epitaxial strain and undergo a metal-to-insulator transition with decreasing film thickness. We have investigated the magnetic properties of SR
Magneto-transport properties of SrIrO$_3$ thin films epitaxially grown on SrTiO$_3$, using reactive RF sputtering, are investigated. A large anisotropy between the in-plane and the out-of-plane resistivities is found, as well as a signature of the su
After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polariz
We present a new type of temperature driven spin reorientation transition (SRT) in thin films. It can occur when the lattice and the shape anisotropy favor different easy directions of the magnetization. Due to different temperature dependencies of t
Nickelates are known for their metal to insulator transition (MIT) and an unusual magnetic ordering, occurring at T=T_Neel. Here, we investigate thin films of SmNiO_3 subjected to different levels of epitaxial strain. We find that the original bulk b