اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدControl of defect-mediated tunneling barrier heights in ultrathin MgO films
322
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The impact of oxygen vacancies on local tunneling properties across rf-sputtered MgO thin films was investigated by optical absorption spectroscopy and conducting atomic force microscopy. Adding O$_2$ to the Ar plasma during MgO growth alters the oxygen defect populations, leading to improved local tunneling characteristics such as a lower density of current hotspots and a lower tunnel current amplitude. We discuss a defect-based potential landscape across ultrathin MgO barriers.
قيم البحث
اقرأ أيضاً
Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic device applications. In the few-nanometer-thick epitaxial oxide films, atomic-scale
structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and device performance. However, the underlying physics has not been investigated adequately. Here, taking ultrathin BaTiO3 films as a model system, we report an intrinsic tunneling conductance enhancement near the terrace edges. Scanning probe microscopy results demonstrate the existence of highly-conductive regions (tens of nanometers-wide) near the terrace edges. First-principles calculations suggest that the terrace edge geometry can trigger an electronic reconstruction, which reduces the effective tunneling barrier width locally. Furthermore, such tunneling conductance enhancement can be discovered in other transition-metal-oxides and controlled by surface termination engineering. The controllable electronic reconstruction could facilitate the implementation of oxide electronic devices and discovery of exotic low-dimensional quantum phases.
The magnetization of Pd(100) ultrathin films that show ferromagnetism due to quantum well states was manipulated by changing the quantum well state with an applied bias voltage. The voltage dependence of the magnetic moment of Pd/SrTiO$_{3-x}$/Ti/Au
intrinsically depends on the Pd film thickness. The induced change in the magnetic moment is due to the modulation of the phase shift at the interface between the Pd thin film and the semiconductor SrTiO$_{3-x}$ substrate.
We present a combined analytical and numerical micromagnetic study of the equilibrium energy, size and shape of anti-skyrmionic magnetic configurations. Anti-skyrmions can be stabilized when the Dzyaloshinskii-Moriya interaction has opposite signs al
ong two orthogonal in-plane directions, breaking the magnetic circular symmetry. We compare the equilibrium energy, size and shape of anti-skyrmions and skyrmions that are stabilized respectively in environments with anisotropic and isotropic Dzyaloshinskii-Moriya interaction, but with the same strength of the magnetic interactions.When the dipolar interactions are neglected the skyrmion and the anti-skyrmion have the same energy, shape and size in their respective environment. However, when dipolar interactions are considered, the energy of the anti-skyrmion is strongly reduced and its equilibrium size increased with respect to the skyrmion. While the skyrmion configuration shows homochiral N{e}el magnetization rotations, anti-skyrmions show partly N{e}el and partly Bloch rotations. The latter do not produce magnetic charges and thus cost less dipolar energy. Both magnetic configurations are stable when the magnetic energies almost cancel each other, which means that a small variation of one parameter can drastically change their configuration, size and energy.
Spin-pumping generates pure spin currents in normal metals at the ferromagnet (F)/normal metal (N) interface. The efficiency of spin-pumping is given by the spin mixing conductance, which depends on N and the F/N interface. We directly study the spin
-pumping through an MgO tunnel-barrier using the inverse spin Hall effect, which couples spin and charge currents and provides a direct electrical detection of spin currents in the normal metal. We find that spin-pumping is suppressed by the tunnel-barrier, which is contrary to recent studies that suggest that the spin mixing conductance can be enhanced by a tunnel-barrier inserted at the interface.
Nitrogen-vacancy magnetic microscopy is employed in quenching mode as a non-invasive, high resolution tool to investigate the morphology of isolated skyrmions in ultrathin magnetic films. The skyrmion size and shape are found to be strongly affected
by local pinning effects and magnetic field history. Micromagnetic simulations including static disorder, based on a physical model of grain-to-grain thickness variations, reproduce all experimental observations and reveal the key role of disorder and magnetic history in the stabilization of skyrmions in ultrathin magnetic films. This work opens the way to an in-depth understanding of skyrmion dynamics in real, disordered media.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
