ﻻ يوجد ملخص باللغة العربية
Recent experimental measurements of magnetoresistance in dual spin valves [A. Aziz et al., Phys. Rev. Lett. 103, 237203 (2009)] reveal some nonlinear features of transport, which have not been observed in other systems. We propose a phenomenological model describing current-dependent resistance (and giant magnetoresistance) in double spin valves. The model is based on a modified Valet-Fert approach, and takes into account the dependence of bulk/interface resistance and bulk/interface spin asymmetry parameters for the central magnetic layer on spin accumulation, and consequently on charge current. Such a nonlinear model accounts for recent experimental observations.
Spin-transfer torque and current induced spin dynamics in spin-valve nanopillars with the free magnetic layer located between two magnetic films of fixed magnetic moments is considered theoretically. The spin-transfer torque in the limit of diffusive
The field of spin electronics (spintronics) was initiated by the discovery of giant magnetoresistance (GMR) for which Fert[1] and Grunberg[2] were awarded the 2007 Nobel Prize for Physics. GMR arises from differential scattering of the majority and m
We present a study of the effects of inelastic scattering on the transport properties of various nanoscale devices, namely H$_2$ molecules sandwiched between Pt contacts, and a spin-valve made by an organic molecule attached to model half-metal ferro
We investigate effects of spin-orbit splitting on electronic transport in a spin valve consisting of a large quantum dot defined on a two-dimensional electron gas with two ferromagnetic contacts. In the presence of both structure inversion asymmetry
We employ the spin absorption technique in lateral spin valves to extract the spin diffusion length of Permalloy (Py) as a function of temperature and resistivity. A linear dependence of the spin diffusion length with conductivity of Py is observed,