ﻻ يوجد ملخص باللغة العربية
Using nonequilibrium molecular-dynamics simulations, we study the temperature dependence of the negative differential thermal resistance that appears in two-segment Frenkel-Kontorova lattices. We apply the theoretical method based on Landauer equation to obtain the relationship between the heat current and the temperature, which states a fundamental interpretation about the underlying physical mechanism of the negative differential thermal resistance. The temperature profiles and transport coefficients are demonstrated to explain the crossover from diffusive to ballistic transport. The finite-size effect is also discussed.
We report on the first model of a thermal transistor to control heat flow. Like its electronic counterpart, our thermal transistor is a three-terminal device with the important feature that the current through the two terminals can be controlled by s
We observed a strong modulation in the current-voltage characteristics of SrRuO$_3$/Nb:SrTiO$_3$ Schottky junctions by Mn substitution in SrRuO$_3$, which induces a metal-insulator transition in bulk. The temperature dependence of the junction ideali
We study thermal properties of one dimensional(1D) harmonic and anharmonic lattices with mass gradient. It is found that the temperature gradient can be built up in the 1D harmonic lattice with mass gradient due to the existence of gradons. The heat
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor devices in
We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs h