اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدInfluence of oxygen reduction on the structural and electronic properties of electron-doped Sr1-xLaxCuO2 thin films
125
0
0.0
(
0
)
تأليف
Z. Z. Li
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Single phase, c-axis oriented, e-doped, Sr1-xLaxCuO2 thin films were epitaxially grown on KTaO3 and DyScO3 substrates by reactive rf sputtering. As-grown films being insulating due to oxygen excess, oxygen reduction is necessary to observe superconductivity. Two different procedures were employed to reach superconductivity. On one hand an in-situ reduction process was conducted on a series of films deposited on both types of substrates. On the other hand, an ex-situ reduction procedure was performed sequentially on a single film deposited on DyScO3. The study of the influence of oxygen reduction on the structural and electronic properties of the thin films is presented and discussed.
قيم البحث
اقرأ أيضاً
We have performed a systematic angle-resolved photoemission study of as-grown and oxygen-reduced Pr$_{2-x}$Ce$_x$CuO$_4$ and Pr$_{1-x}$LaCe$_{x}$CuO$_4$ electron-doped cuprates. In contrast to the common belief, neither the band filling nor the band
parameters are significantly affected by the oxygen reduction process. Instead, we show that the main electronic role of the reduction process is to remove an anisotropic leading edge gap around the Fermi surface. While the nodal leading edge gap is induced by long-range antiferomagnetic order, the origin of the antinodal one remains unclear.
The asymmetry between electron and hole doping remains one of the central issues in high-temperature cuprate superconductivity, but our understanding of the electron-doped cuprates has been hampered by apparent discrepancies between the only two know
n families: Re2-xCexCuO4 and A1-xLaxCuO2. Here we report in situ angle-resolved photoemission spectroscopy measurements of epitaxially-stabilized films of Sr1-xLaxCuO2 synthesized by oxide molecular-beam epitaxy. Our results reveal a strong coupling between electrons and (pi,pi) antiferromagnetism that induces a Fermi surface reconstruction which pushes the nodal states below the Fermi level. This removes the hole pocket near (pi/2,pi/2), realizing nodeless superconductivity without requiring a change in the symmetry of the order parameter and providing a universal understanding of all electron-doped cuprates.
We show how intrinsic material properties modify light transmission through subwavelength hole arrays on thin metallic films in the THz regime. We compare the temperature-dependent transmittance of Au films and MgB$_{2}$ films. The experimental data
is consistent with analytical calculations, and is attributed to the temperature change of the conductivity of both films. The transmission versus conductivity is interpreted within the open resonator model when taking the skin depth into consideration. We also show that the efficiency of this temperature control depends on the ratio of the transmission peak frequency to the superconducting energy gap in MgB$_{2}$ films.
We have explored the influence of deposition pressure and temperature on the growth of BiFeO3 thin films by pulsed laser deposition onto (001)-oriented SrTiO3 substrates. Single-phase BiFeO3 films are obtained in a region close to 10-2 mbar and 580C.
In non-optimal conditions, X-ray diffraction reveals the presence of Fe oxides or of Bi2O3. We address the influence of these parasitic phases on the magnetic and electrical properties of the films and show that films with Fe2O3 systematically exhibit a ferromagnetic behaviour, while single-phase films have a low bulk-like magnetic moment. Conductive-tip atomic force microscopy mappings also indicate that Bi2O3 conductive outgrowths create shortcuts through the BiFeO3 films, thus preventing their practical use as ferroelectric elements in functional heterostructures.
We have used the electric--field effect to modulate the resistivity of the surface of underdoped Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films, allowing opposite modifications of the electron and hole density in the CuO$_2$ planes, an original situati
on with respect to conventional chemical doping in electron-doped materials. When the Hall effect indicates a large contribution of a hole band, the electric--field effect on the normal state resistivity is however dominated by the electrons, and the superconducting transition temperature increases when carriers are transfered from holes to electrons.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
