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We have embedded an AlGaAs/GaAs based, gated 2D hole system (2DHS) into an impedance transformer $LC$ circuit, and show that by using radio-frequency reflectometry it is possible to perform sensitive, large bandwidth, electrical resistance measurements of 2D systems at mK temperatures. We construct a simple lumped element model where the gated 2DHS is described as a resistive transmission line. The model gives a qualitative understanding of the experimental results. As an example, we use our method to map out the Landau level evolution in a 2DHS as a function of magnetic field and gate voltage.
Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena due to their charge stability and robust electronic prop
RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacit
A radio-frequency (rf) matching circuit with an in situ tunable varactor diode used for rf reflectometry measurements in semiconductor nanostructures is investigated and used to optimize the sample-specific chip design. The samples are integrated in
We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise
The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of an LCR tank circuit. Applied to a silicon field-effect transistor at milli-kelvin temperatures, this method shows a 25-fold increased signal-