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Effects of strong electric fields on hopping conductivity are studied theoretically. Monte-Carlo computer simulations show that the analytical theory of Nguyen and Shklovskii [Solid State Commun. 38, 99 (1981)] provides an accurate description of hopping transport in the limit of very high electric fields and low concentrations of charge carriers as compared to the concentration of localization sites and also at the relative concentration of carriers equal to 0.5. At intermediate concentrations of carriers between 0.1 and 0.5 computer simulations evidence essential deviations from the results of the existing analytical theories. The theory of Nguyen and Shklovskii also predicts a negative differential hopping conductivity at high electric fields. Our numerical calculations confirm this prediction qualitatively. However the field dependence of the drift velocity of charge carriers obtained numerically differs essentially from the one predicted so far. Analytical theory is further developed so that its agreement with numerical results is essentially improved.
We study the effect of a strong electric field on the fluctuation conductivity within the time-dependent Ginzburg-Landau theory for the case of arbitrary dimension. Our results are based on the analytical derivation of the velocity distribution law f
In one-dimensional electronic systems with strong repulsive interactions, charge excitations propagate much faster than spin excitations. Such systems therefore have an intermediate temperature range [termed the spin-incoherent Luttinger liquid (SILL
We study thermal properties of one dimensional(1D) harmonic and anharmonic lattices with mass gradient. It is found that the temperature gradient can be built up in the 1D harmonic lattice with mass gradient due to the existence of gradons. The heat
The atomic saw method uses the passage of dislocations in two-dimensional (2D) quantum-well superlattices to create periodic slipping layers and one-dimensional (1D) quantum wire superlattices. The effects of this space structuring of the samples on
Despite the fact that the problem of interference mechanism of magnetoresistance in semiconductors with hopping conductivity was widely discussed, most of existing studies were focused on the model of spinless electrons. This model can be justified o