اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدDirect evidence of enhanced Ga interdiffusion in InAs vertically aligned free-standing nanowires
428
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron microscopy together with X-ray diffraction measurements in coplanar and grazing incidence geometries show that nominally grown InAs NWs are actually made of In$_{0.86}$Ga$_{0.14}$As. Unlike typical vapor-liquid-solid growth, these nanowires are formed by diffusion-induced growth combined with strong interdiffusion from substrate material. Based on the experimental results, a simple nanowire growth model accounting for the Ga interdiffusion is also presented. This growth model could be generally applicable to the molecular beam heteroepitaxy of III-V nanowires.
قيم البحث
اقرأ أيضاً
Images of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when epitaxial templating from the substrate is clearly absent. Here, we reveal the physics underlying one such hidden growth guidance mechanism through a sp
ecific example - the case of ZnO nanowires grown on silicon oxide and glass. We show how electric fields exerted by the insulating substrate may be manipulated through the surface charge to define the orientation and polarity of the nanowires. Surface charge is ubiquitous on the surfaces of semiconductors and insulators, and as a result, substrate electric fields need always be considered. Our results suggest a new concept, according to which the growth of wurtzite semiconductors may often be described as a process of electric-charge-induced self assembly, wherein the internal built-in field in the polar material tends to align in parallel to an external field exerted by the substrate to minimize the interfacial energy of the system.
Similar to electron waves, the phonon states in semiconductors can undergo changes induced by external boundaries. Modification of acoustic phonon spectrum in structures with periodically modulated elastic constant or mass density - referred to as ph
ononic crystals - has been proven experimentally and utilized in practical applications. A possibility of modifying acoustic phonon spectrum in individual nanostructures via spatial confinement would bring tremendous benefits for controlling phonon-electron interaction and thermal conduction at nanoscale. However, despite strong scientific and practical importance, conclusive experimental evidence of acoustic phonon confinement in individual free-standing nanostructures, e.g. nanowires, is still missing. The length scale, at which phonon dispersion undergoes changes and a possibility of the phonon group velocity reduction, are debated. Here, we utilize specially designed high-quality GaAs nanowires (NWs) with different diameters, D, and large inter-nanowire distances to directly demonstrate acoustic phonon confinement. The measurements conducted with Brillouin - Mandelstam spectroscopy reveal confined phonon polarization branches with frequencies from 4 GHz to 40 GHz in NWs with D as large as ~128 nm, i.e. at length scale, which exceeds the grey phonon mean-free path in GaAs by an almost an order of magnitude. The phonon dispersion modification and phonon energy scaling with D in individual nanowires are in excellent agreement with theory. The obtained results can lead to more efficient nanoscale control of acoustic phonons, with benefits for nanoelectronics, thermoelectric energy conversion, thermal management, and novel spintronic technologies.
Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS), and by standing-wave HXPS (SW-HXPS). Information on the chemical compo
sition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with angstrom precision. We determined that: i) the exposure to air induced the formation of an InAsO$_4$ layer on top of the stoichiometric InAs(QM); ii) the top interface between the air-side InAsO$_4$ and the InAs(QM) is not sharp, indicating that interdiffusion occurs between these two layers; iii) the bottom interface between the InAs(QM) and the native oxide SiO$_2$ on top of the (Si/Mo) substrate is abrupt. In addition, the valence band offset (VBO) between the InAs(QM) and the SiO$_2$/(Si/Mo) substrate was determined by HXPS. The value of $VBO = 0.2 pm 0.04$ eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO$_2$ heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials.
Excitonic spectra are calculated for free-standing, surface passivated InAs quantum dots using atomic pseudopotentials for the single-particle states and screened Coulomb interactions for the two-body terms. We present an analysis of the single parti
cle states involved in each excitation in terms of their angular momenta and Bloch-wave parentage. We find that (i) in agreement with other pseudopotential studies of CdSe and InP quantum dots, but in contrast to k.p calculations, dot states wavefunction exhibit strong odd-even angular momentum envelope function mixing (e.g. $s$ with $p$) and large valence-conduction coupling. (ii) While the pseudopotential approach produced very good agreement with experiment for free-standing, colloidal CdSe and InP dots, and for self-assembled (GaAs-embedded) InAs dots, here the predicted spectrum does {em not} agree well with the measured (ensemble average over dot sizes) spectra. (1) Our calculated excitonic gap is larger than the PL measure one, and (2) while the spacing between the lowest excitons is reproduced, the spacings between higher excitons is not fit well. Discrepancy (1) could result from surface states emission. As for (2), agreement is improved when account is taken of the finite size distribution in the experimental data. (iii) We find that the single particle gap scales as $R^{-1.01}$ (not $R^{-2}$), that the screened (unscreened) electron-hole Coulomb interaction scales as $R^{-1.79}$ ($R^{-0.7}$), and that the eccitonic gap sclaes as $R^{-0.9}$. These scaling laws are different from those expected from simple models.
Microtribological properties of vertically-aligned carbon-nanotube (VACNT) films have been studied. Adhesion forces were obtained by measuring force-displacement curves. Friction experiments were conducted in reciprocating sliding configurations. Eff
ects of tip radius, applied force, scan speed, and relative humidity were investigated. A model of the friction of VACNT film is discussed on the basis of in-situ tribological experiments inside a scanning electron microscope (SEM).
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
