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We report the observation of a novel phenomenon, the self-retracting motion of graphite, in which tiny flakes of graphite, after being displaced to various suspended positions from islands of highly orientated pyrolytic graphite, retract back onto the islands under no external influences. Our repeated probing and observing such flakes of various sizes indicate the existence of a critical size of flakes, approximately 35 micrometer, above which the self-retracting motion does not occur under the operation. This helps to explain the fact that the self-retracting motion of graphite has not been reported, because samples of natural graphite are typical larger than this critical size. In fact, reports of this phenomenon have not been found in the literature for single crystals of any kinds. A model that includes the static and dynamic shear strengths, the van der Waals interaction force, and the edge dangling bond interaction effect, was used to explain the observed phenomenon. These findings may conduce to create nano-electromechanical systems with a wide range of mechanical operating frequency from mega to giga hertzs.
Through experimental study, we reveal superlubricity as the mechanism of self-retracting motion of micrometer sized graphite flakes on graphite platforms by correlating respectively the lock-up or self-retraction states with the commensurate or incom
Exposure of highly oriented pyrolytic graphite to bromine vapor gives rise to in-plane charge conductivities which increase monotonically with intercalation time toward values (for ~6 at% Br) that are significantly higher than Cu at temperatures down
We present a x-ray dichroism study of graphite surfaces that addresses the origin and magnitude of ferromagnetism in metal-free carbon. We find that, in addition to carbon $pi$ states, also hydrogen-mediated electronic states exhibit a net spin polar
The transport properties of highly oriented pyrolitic graphite (HOPG) and polycrystal graphite have been studied. The electric conductivity of HOPG is several times larger than that of the polycrystal graphite. Along with the large magnetoresistances
We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics a