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We study the intrinsic orbital magnetization (OM) in antiferromagnets on the distorted face-centered-cubic lattice. The combined lattice distortion and spin frustration induce nontrivial $k$-space Chern invariant, which turns to result in profound effects on the OM properties. We derive a specific relation between the OM and the Hall conductivity, according to which it is found that the intrinsic OM vanishes when the electron chemical potential lies in the Mott gap. The distinct behavior of the intrinsic OM in the metallic and insulating regions is shown. The Berry phase effects on the thermoelectric transport is also discussed.
Motivated by a recent experiment on volborthite, a typical spin-$1/2$ antiferromagnet with a kagom{e} lattice structure, we study the magnetization process of a classical Heisenberg model on a spatially distorted kagom{e} lattice using the Monte Carl
Response properties that are purely intrinsic to physical systems are of paramount importance in physics research, as they probe fundamental properties of band structures and allow quantitative calculation and comparison with experiment. For anomalou
Topological insulators represent a new quantum state of matter that are insulating in the bulk but metallic on the edge or surface. In the Dirac surface state, it is well-established that the electron spin is locked with the crystal momentum. Here we
Based on standard perturbation theory, we present a full quantum derivation of the formula for the orbital magnetization in periodic systems. The derivation is generally valid for insulators with or without a Chern number, for metals at zero or finit
The electronic topology is generally related to the Berry curvature, which can induce the anomalous Hall effect in time-reversal symmetry breaking systems. Intrinsic monolayer transition metal dichalcogenides possesses two nonequivalent K and K valle