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We study RKKY interactions between local magnetic moments for both doped and undoped graphene. We find in both cases that the interactions are primarily ferromagnetic for moments on the same sublattice, and antiferromagnetic for moments on opposite sublattices. This suggests that at sufficiently low temperatures dilute magnetic moments embedded in graphene can order into a state analogous to that of a dilute antiferromagnet. We find that in the undoped case one expects no net magnetic moment, and demonstrate numerically that this effect generalizes to ribbons where the magnetic response is strongest at the edge, suggesting the possibility of an unusual spin-transfer device. For doped graphene we find that moments at definite lattice sites interact over longer distances than those placed in interstitial sites of the lattice ($1/R^2$ vs. $1/R^3$) because the former support a Kohn anomaly that is suppressed in the latter due to the absence of backscattering.
Antiferromagnetic insulators (AFMI) are robust against stray fields, and their intrinsic dynamics could enable ultrafast magneto-optics and ultrascaled magnetic information processing. Low dissipation, long distance spin transport and electrical mani
We report interlayer electronic transport in CaMnBi$_{2}$ single crystals. Quantum oscillations and angular magnetoresistance suggest coherent electronic conduction and valley polarized conduction of Dirac states. Small cyclotron mass, large mobility
We demonstrate that an antiferromagnet can be employed for a highly efficient electrical manipulation of a ferromagnet. In our study we use an electrical detection technique of the ferromagnetic resonance driven by an in-plane ac-current in a NiFe/Ir
Graphene oxide (GO) flakes have been deposited to bridge the gap between two epitaxial graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers (SB) at the graphene/graphene oxide junctio
Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undope