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Register a new userMagnetic anisotropy in HoIr$_2$Si$_2$ ($I4/mmm$)
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Single crystals of HoIr$_2$Si$_2$ with the body-centered ThCr$_2$Si$_2$-type structure ($I4/mmm$) were grown by Bridgman method from indium flux. Single crystal structure determination yielded a Si-z position of 0.378(1) in the structure. We excluded the presence of the high temperature phase with the primitive CaBe$_2$Ge$_2$-type structure ($P 4/n m m$) by powder X-ray diffraction. Magnetic measurements on the single crystals yield a Neel temperature of $T_{rm N}=22,rm K$. In the inverse magnetic susceptibility a strong anisotropy with Weiss temperatures $Theta_{W}^{001}=26,rm K$ and $Theta_{W}^{100}=-26,rm K$ occurs above $T_{rm N}$. The effective magnetic moment $mu_{rm eff}^{001}=10.64mu_{B}$ and $mu_{rm eff}^{100}=10.53mu_{B}$ is close to the expected value for a free Ho$^{3+}$ ion, $mu_{rm eff}^{calc}=10.6mu_{B}$. The field dependent magnetization shows a step-like behaviour due to crystalline electric field effects.
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We investigated the anisotropic magnetic properties of CePd$_2$As$_2$ by magnetic, thermal and electrical transport studies. X-ray diffraction confirmed the tetragonal ThCr$_2$Si$_2$-type structure and the high-quality of the single crystals. Magnetisation and magnetic susceptibility data taken along the different crystallographic directions evidence a huge crystalline electric field (CEF) induced Ising-type magneto-crystalline anisotropy with a large $c$-axis moment and a small in-plane moment at low temperature. A detailed CEF analysis based on the magnetic susceptibility data indicates an almost pure $langlepm5/2 rvert$ CEF ground-state doublet with the dominantly $langlepm3/2 rvert$ and the $langlepm1/2 rvert$ doublets at 290 K and 330 K, respectively. At low temperature, we observe a uniaxial antiferromagnetic (AFM) transition at $T_N=14.7$ K with the crystallographic $c$-direction being the magnetic easy-axis. The magnetic entropy gain up to $T_N$ reaches almost $Rln2$ indicating localised $4f$-electron magnetism without significant Kondo-type interactions. Below $T_N$, the application of a magnetic field along the $c$-axis induces a metamagnetic transition from the AFM to a field-polarised phase at $mu_0H_{c0}=0.95$ T, exhibiting a text-book example of a spin-flip transition as anticipated for an Ising-type AFM.
The $g$-factor anisotropy of the heavy quasiparticles in the hidden order state of URu$_2$Si$_2$ has been determined from the superconducting upper critical field and microscopically from Shubnikov-de Haas (SdH) oscillations. We present a detailed analysis of the $g$-factor for the $alpha$, $beta$ and $gamma$ Fermi-surface pockets. Our results suggest a strong $g$-factor anisotropy between the $c$ axis and the basal plane for all observed Fermi surface pockets. The observed anisotropy of the $g$-factor from the quantum oscillations is in good agreement with the anisotropy of the superconducting upper critical field at low temperatures, which is strongly limited by the paramagnetic pair breaking along the easy magnetization axis $c$. However, the anisotropy of the initial slope of the upper critical field near $T_c$ cannot be explained by the anisotropy of the effective masses and Fermi velocities derived from quantum oscillations.
We report $^{29}$Si NMR measurements in single crystals and aligned powders of URu$_2$Si$_2$ in the hidden order and paramagnetic phases. The spin-lattice-relaxation data reveal evidence of pseudospin fluctuations of U moments in the paramagnetic phase. We find evidence for partial suppression of the density of states below 30 K, and analyze the data in terms of a two component spin-fermion model. We propose that this behavior is a realization of a pseudogap between the hidden order transition $T_{HO}$ and 30 K. This behavior is then compared to other materials that demonstrate precursor fluctuations in a pseudogap regime above a ground state with long-range order.
The anisotropy of magnetic properties commonly is introduced in textbooks using the case of an antiferromagnetic system with Ising type anisotropy. This model presents huge anisotropic magnetization and a pronounced metamagnetic transition and is well-known and well-documented both, in experiments and theory. In contrast, the case of an antiferromagnetic $X$-$Y$ system with weak in-plane anisotropy is only poorly documented. We studied the anisotropic magnetization of the compound GdRh$_2$Si$_2$ and found that it is a perfect model system for such a weak-anisotropy setting because the Gd$^{3+}$ ions in GdRh$_2$Si$_2$ have a pure spin moment of S=7/2 which orders in a simple AFM structure with ${bf Q} = (001)$. We observed experimentally in $M(B)$ a continuous spin-flop transition and domain effects for field applied along the $[100]$- and the $[110]$-direction, respectively. We applied a mean field model for the free energy to describe our data and combine it with an Ising chain model to account for domain effects. Our calculations reproduce the experimental data very well. In addition, we performed magnetic X-ray scattering and X-ray magnetic circular dichroism measurements, which confirm the AFM propagation vector to be ${bf Q} = (001)$ and indicate the absence of polarization on the rhodium atoms.
We measured the temperature dependences of the static magnetization and the spin excitation in a square-lattice multiferroics Ba$_2$MnGe$_2$O$_7$. An anisotropy gap of the observed low energy mode is scaled by electric polarization rather than a power of sublattice moment. Spin nematic interaction in effective spin Hamiltonian, which is equivalent to interaction of electric polarization, is responsible for the easy-axis anisotropy. The nontrivial behavior of the anisotropy gap can be rationalized as change of the hybridized $d$-$p$ orbital with temperature, leading to the temperature dependence of the spin nematic interaction.
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