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Critical Current Oscillations in Strong Ferromagnetic Pi-Junctions

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 Added by Gavin Burnell
 Publication date 2006
  fields Physics
and research's language is English




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We report magnetic and electrical measurements of Nb Josephson junctions with strongly ferromagnetic barriers of Co, Ni and Ni80Fe20 (Py). All these materials show multiple oscillations of critical current with barrier thickness implying repeated 0-pi phase-transitions in the superconducting order parameter. We show in particular that the Co barrier devices can be accurately modelled using existing clean limit theories and so that, despite the high exchange energy (309 meV), the large IcRN value in the pi-state means Co barriers are ideally suited to the practical development of superconducting pi-shift devices.



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Josephson junctions containing ferromagnetic layers are of considerable interest for the development of practical cryogenic memory and superconducting qubits. Such junctions exhibit a phase shift of $pi$ for certain ranges of ferromagnetic layer thickness. We present studies of Nb based micron-scale elliptically-shaped Josephson junctions containing ferromagnetic barriers of Ni$_{81}$Fe$_{19}$ or Ni$_{65}$Co$_{20}$Fe$_{15}$. By applying an external magnetic field, the critical current of the junctions are found to follow characteristic Fraunhofer patterns, and display sharp switching behavior suggestive of single-domain magnets. The high quality of the Fraunhofer patterns enables us to extract the maximum value of the critical current even when the peak is shifted significantly outside the range of the data due to the magnetic moment of the ferromagnetic layer. The maximum value of the critical current oscillates as a function of the ferromagnetic barrier thickness, indicating transitions in the phase difference across the junction between values of zero and $pi$. We compare the data to previous work and to models of the 0-$pi$ transitions based on existing theories.
Josephson junctions with ferromagnetic layers are vital elements in a new class of cryogenic memory devices. One style of memory device contains a spin valve with one hard magnetic layer and one soft layer. To achieve low switching fields, it is advantageous for the soft layer to have low magnetization and low magnetocrystalline anisotropy. A candidate class of materials that fulfills these criteria is the Pd$_{1-x}$Fe$_{x}$ alloy system with low Fe concentrations. We present studies of micron-scale elliptically-shaped Josephson junctions containing Pd$_{97}$Fe$_{3}$ layers of varying thickness. By applying an external magnetic field, the critical current of the junctions are found to follow characteristic Fraunhofer patterns. The maximum value of the critical current, extracted from the Fraunhofer patterns, oscillates as a function of the ferromagnetic barrier thickness, indicating transitions in the phase difference across the junction between values of zero and $pi$.
We present a study on low-$T_c$ superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson junctions. SIFS junctions have gained considerable interest in recent years because they show a number of interesting properties for future classical and quantum computing devices. We optimized the fabrication process of these junctions to achieve a homogeneous current transport, ending up with high-quality samples. Depending on the thickness of the ferromagnetic layer and on temperature, the SIFS junctions are in the ground state with a phase drop either 0 or $pi$. By using a ferromagnetic layer with variable step-like thickness along the junction, we obtained a so-called 0-$pi$ Josephson junction, in which 0 and $pi$ ground states compete with each other. At a certain temperature the 0 and $pi$ parts of the junction are perfectly symmetric, i.e. the absolute critical current densities are equal. In this case the degenerate ground state corresponds to a vortex of supercurrent circulating clock- or counterclockwise and creating a magnetic flux which carries a fraction of the magnetic flux quantum $Phi_0$.
The dependence of the critical current density j_c on the ferromagnetic interlayer thickness d_F was determined for Nb/Al_2O_3/Cu/Ni/Nb Josephson tunnel junctions with ferromagnetic Ni interlayer from very thin film thicknesses (sim 1 nm) upwards and classified into F-layer thickness regimes showing a dead magnetic layer, exchange, exchange + anisotropy and total suppression of j_c. The Josephson coupling changes from 0 to pi as function of d_F, and -very close to the crossover thickness- as function of temperature. The strong suppression of the supercurrent in comparison to non-magnetic Nb/Al_2O_3/Cu/Nb junctions indicated that the insertion of a F-layer leads to additional interface scattering. The transport inside the dead magnetic layer was in dirty limit. For the magnetically active regime fitting with both the clean and the dirty limit theory were carried out, indicating dirty limit condition, too. The results were discussed in the framework of literature
We fabricated high quality Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Using a ferromagnetic layer with a step-like thickness, we obtain a 0-pi junction, with equal lengths and critical currents of 0 and pi parts. The ground state of our 330 microns (1.3 lambda_J) long junction corresponds to a spontaneous vortex of supercurrent pinned at the 0-pi step and carrying ~6.7% of the magnetic flux quantum Phi_0. The dependence of the critical current on the applied magnetic field shows a clear minimum in the vicinity of zero field.
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