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Recent acoustic and electrical-circuit experiments have reported the third-order (or octupole) topological insulating phase, while its counterpart in classical magnetic systems is yet to be realized. Here we explore the collective dynamics of magnetic vortices in three-dimensional breathing cuboids, and find that the vortex lattice can support zero-dimensional corner states, one-dimensional hinge states, two-dimensional surface states, and three-dimensional bulk states, when the ratio of alternating intralayer and interlayer bond lengths goes beyond a critical value. We show that only the corner states are stable against external frustrations because of the topological protection. Full micromagnetic simulations verify our theoretical predictions with good agreement.
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We study the topological phase in dipolar-coupled two-dimensional breathing square lattice of magnetic vortices. By evaluating the quantized Chern number and $mathbb{Z}_{4}$ Berry phase, we obtain the phase diagram and identify that the second-order topological corner states appear only when the ratio of alternating bond lengths goes beyond a critical value. Interestingly, we uncover three corner states at different frequencies ranging from sub GHz to tens of GHz by solving the generalized Thieles equation, which has no counterpart in condensed matter system. We show that the emerging corner states are topologically protected by a generalized chiral symmetry of the quadripartite lattice, leading to particular robustness against disorder and defects. Full micromagnetic simulations confirm theoretical predictions with a great agreement. A vortex-based imaging device is designed as a demonstration of the real-world application of the second-order magnetic topological insulator. Our findings provide a route for realizing symmetry-protected multi-band corner states that are promising to achieve spintronic higher-order topological devices.
A second-order topological insulator (SOTI) in $d$ spatial dimensions features topologically protected gapless states at its $(d-2)$-dimensional boundary at the intersection of two crystal faces, but is gapped otherwise. As a novel topological state, it has been attracting great interest, but it remains a challenge to identify a realistic SOTI material in two dimensions (2D). Here, based on combined first-principles calculations and theoretical analysis, we reveal the already experimentally synthesized 2D material graphdiyne as the first realistic example of a 2D SOTI, with topologically protected 0D corner states. The role of crystalline symmetry, the robustness against symmetry-breaking, and the possible experimental characterization are discussed. Our results uncover a hidden topological character of graphdiyne and promote it as a concrete material platform for exploring the intriguing physics of higher-order topological phases.
The three dimensional (3D) topological insulators are predicted to exhibit a 3D Dirac semimetal state in critical regime of topological to trivial phase transition. Here we demonstrate the first experimental evidence of 3D Dirac semimetal state in topological insulator Bi2Se3 with bulk carrier concentration of ~ 10^19 cm^{-3}, using magneto-transport measurements. At low temperatures, the resistivity of our Bi2Se3 crystal exhibits clear Shubnikov-de Haas (SdH) oscillations above 6T. The analysis of these oscillations through Lifshitz-Onsanger and Lifshitz-Kosevich theory reveals a non-trivial pi Berry phase coming from 3D bands, which is a decisive signature of 3D Dirac semimetal state. The large value of Dingle temperature and natural selenium vacancies in our crystal suggest that the observed 3D Dirac semimetal state is an outcome of enhanced strain field and weaker effective spin-orbit coupling.
From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experimental band structure agrees reasonably well with the predictions of the $mathbf{kcdot p}$ model. Due to the strong hybridization of the surface and bulk bands, the dispersion of the surface states is close to parabolic in the broad range of the electron energies.
The recent discovery of higher-order topological insulators (TIs) has opened new possibilities in the search for novel topological materials and metamaterials. Second-order TIs have been implemented in two-dimensional (2D) systems exhibiting topological corner states, as well as three-dimensional (3D) systems having one-dimensional (1D) topological hinge states. Third-order TIs, which have topological states three dimensions lower than the bulk (which must thus be 3D or higher), have not yet been reported. Here, we describe the realization of a third-order TI in an anisotropic diamond-lattice acoustic metamaterial. The bulk acoustic bandstructure has nontrivial topology characterized by quantized Wannier centers. By direct acoustic measurement, we observe corner states at two corners of a rhombohedron-like structure, as predicted by the quantized Wannier centers. This work extends topological corner states from 2D to 3D, and may find applications in novel acoustic devices.
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