Electrical tuning of tin-vacancy centers in diamond


Abstract in English

Group-IV color centers in diamond have attracted significant attention as solid-state spin qubits because of their excellent optical and spin properties. Among these color centers, the tin-vacancy (SnV$^{,textrm{-}}$) center is of particular interest because its large ground-state splitting enables long spin coherence times at temperatures above 1$,$K. However, color centers typically suffer from inhomogeneous broadening, which can be exacerbated by nanofabrication-induced strain, hindering the implementation of quantum nodes emitting indistinguishable photons. Although strain and Raman tuning have been investigated as promising techniques to overcome the spectral mismatch between distinct group-IV color centers, other approaches need to be explored to find methods that can offer more localized control without sacrificing emission intensity. Here, we study electrical tuning of SnV$^{,textrm{-}}$ centers in diamond via the direct-current Stark effect. We demonstrate a tuning range beyond 1.7$,$GHz. We observe both quadratic and linear dependence on the applied electric field. We also confirm that the tuning effect we observe is a result of the applied electric field and is distinct from thermal tuning due to Joule heating. Stark tuning is a promising avenue toward overcoming detunings between emitters and enabling the realization of multiple identical quantum nodes.

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