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Effect of Oxygen and Aluminium Incorporation on Local Structure of GaN Nanowires: Insight from Extended X-ray Absorption Fine Structure Analysis

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 Added by S. Dhara SKD
 Publication date 2021
  fields Physics
and research's language is English




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A thorough investigation of local structure, influencing macroscopic properties of the solid is of potential interest. We investigated the local structure of GaN nanowires (NWs) with different native defect concentration synthesized by the chemical vapor deposition technique. Extended X-ray absorption fine structure (EXAFS) analysis and semi-empirical and the density functional theory (DFT) calculations were used to address the effect of dopant incorporation along with other defects on the co-ordination number and bond length values. The decrease of the bond length values along preferential crystal axes in the local tetrahedral structure of GaN emphasizes the preferred lattice site for oxygen doping. The preferential bond length contraction is corroborated by the simulations. We have also studied the impact on the local atomic configuration of GaN NWs with Al incorporation. AlxGa1-xN NWs are synthesized via novel ion beam techniques of ion beam mixing and post-irradiation diffusion process. The change in the local tetrahedral structure of GaN with Al incorporation is investigated by EXAFS analysis. The analysis provides a clear understanding of choosing a suitable process for ternary III-nitride random alloy formation. The local structure study with the EXAFS analysis is corroborated with the observed macroscopic properties studied using Raman spectroscopy.

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Local structure of FeSe(1-x)Te(x) has been studied by extended x-ray absorption fine-structure (EXAFS) measurements as a function of temperature. Combination of Se and Fe K edge EXAFS has permitted to quantify the local interatomic distances and their mean-square relative displacements. The Fe-Se and Fe-Te bond lengths in the ternary system are found to be very different from the average crystallographic Fe-Se/Te distance, and almost identical to the Fe-Se and Fe-Te distances for the binary FeSe and FeTe systems, indicating distinct site occupation by the Se and Te atoms. The results provide a clear evidence of local inhomogeneities and coexisting electronic components in the FeSe1-xTex, characterized by different local structural configurations, with direct implication on the fundamental electronic structure of these superconductors.
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