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Register a new userDemonstration and Operation of Quantum Harmonic Oscillators in AlGaAs/GaAs Heterostructure
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The quantum harmonic oscillator (QHO), one of the most important and ubiquitous model systems in quantum mechanics, features equally spaced energy levels or eigenstates. Here we report on the design, demonstration and operation of nearly perfect QHOs in AlGaAs/GaAs heterostructure. On the basis of model calculations, we demonstrate that, when a substitutional Si donor substitutes the Ga/Al lattice site close to AlGaAs/GaAs heterointerface, a hydrogenic Si QHO, characterized by a restoring Coulomb force producing square law harmonic potential, is formed. This gives rise to QHO states with energy spacing of ~8-9 meV. We experimentally confirm this proposal by utilizing Stark effect and measuring QHO states using an aluminum single-electron transistor (SET). A sharp and fast oscillation with period of ~7-8 mV appears in addition to the regular Coulomb blockade (CB) oscillation with much larger period, for positive gate biases above 0.5 V. The observation of fast oscillation and its behavior is qualitatively consistent with our theoretical result, manifesting the harmonic motion of electrons from the QHO. Our results might establish a general principle to design, construct and manipulate QHOs in semiconductor heterostructures.
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We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons ($mu_textrm{peak}=4times10^6textrm{cm}^2/textrm{Vs}$) and holes ($mu_textrm{peak}=0.8times10^6textrm{cm}^2/textrm{Vs}$) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory.
The heat engine, a machine that extracts useful work from thermal sources, is one of the basic theoretical constructs and fundamental applications of classical thermodynamics. The classical description of a heat engine does not include coherence in its microscopic degrees of freedom. By contrast, a quantum heat engine might possess coherence between its internal states. Although the Carnot efficiency cannot be surpassed, and coherence can be performance degrading in certain conditions, it was recently predicted that even when using only thermal resources, internal coherence can enable a quantum heat engine to produce more power than any classical heat engine using the same resources. Such a power boost therefore constitutes a quantum thermodynamic signature. It has also been shown that the presence of coherence results in the thermodynamic equivalence of different quantum heat engine types, an effect with no classical counterpart. Microscopic heat machines have been recently implemented with trapped ions, and proposals for heat machines using superconducting circuits and optomechanics have been made. When operated with standard thermal baths, however, the machines implemented so far have not demonstrated any inherently quantum feature in their thermodynamic quantities. Here we implement two types of quantum heat engines by use of an ensemble of nitrogen-vacancy centres in diamond, and experimentally demonstrate both the coherence power boost and the equivalence of different heat-engine types. This constitutes the first observation of quantum thermodynamic signatures in heat machines.
The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the heavy holes localized at the heterointerface with photoexcited electrons attracted to the heterointerface from the GaAs layer. Two lines with significantly different decay times constitute the H-band: a short-lived high-energy one and a long-lived low-energy one. The high-energy line originates from recombination of electrons freely moving along the structure plane, while the low-energy one is due to recombination of donor-bound electrons near the interface. Application of the lateral electric field of ~ 100-200 V/cm results in a quenching of both lines. This quenching is due to a decrease of electron concentration near the heterointerface as a result of a photocurrent-induced heating of electrons in the GaAs layer. On the contrary, electrons near the heterointerface are effectively cooled, so the donors near the interface are not completely empty up to ~ 100 V/cm, which is in stark contrast with the case of bulk materials. The optical spin polarization of the donor-bound electrons near the heterointerface weakly depends on the electric field. Their polarization kinetics is determined by the spin dephasing in the hyperfine fields of the lattice nuclei. The long spin memory time (> 40 ns) can be associated with suppression of the Bir-Aronov-Pikus mechanism of spin relaxation for electrons.
In this communication we investigate the quantum statistics of three harmonic oscillators mutually interacting with each other considering the modes are initially in Fock states. After solving the equations of motion, the squeezing phenomenon, sub-Poissonian statistics and quasiprobability functions are discussed. We demonstrate that the interaction is able to produce squeezing of different types. We show also that certain types of Fock states can evolve in this interaction into thermal state and squeezed thermal state governed by the interaction parameters.
In d-dimensional lattices of coupled quantum harmonic oscillators, we analyze the heat current caused by two thermal baths of different temperature, which are coupled to opposite ends of the lattice, with focus on the validity of Fouriers law of heat conduction. We provide analytical solutions of the heat current through the quantum system in the non-equilibrium steady state using the rotating-wave approximation and bath interactions described by a master equation of Lindblad form. The influence of local dephasing in the transition of ballistic to diffusive transport is investigated.
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