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Register a new userAbrupt switching of the anomalous Hall effect by field-rotation in nonmagnetic ZrTe5
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The Hall effect arises when time reversal symmetry is broken by either intrinsic magnetism or an external magnetic field. The latter contribution dominates in non-magnetic materials, in which the angular dependence of the Hall effect is typically a smooth cosine function because only the out-of-plane projection of the field generates the in-plane transverse motion of electrons. Here, we report the observation of an abrupt switching of the Hall effect by field rotation in a non-magnetic material, ZrTe5. The angular dependence of the Hall resistivity approaches a signum function, persisting down to an extremely low field of 0.03 T. By varying the carrier density of ZrTe5 over three orders of magnitude, we show that this singular behavior is due to the anomalous Hall effect generated by the ultra-dilute massive Dirac carriers in the quantum limit of Pauli paramagnetism when the Zeeman energy exceeds the Fermi energy. Our results elucidate the origin of the anomalous Hall effect in ZrTe5, arising owing to the spin-polarized massive Dirac electrons rather than the separation of Weyl nodes.
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ZrTe$_5$ has been of recent interest as a potential Dirac/Weyl semimetal material. Here, we report the results of experiments performed via in-situ 3D double-axis rotation to extract the full $4pi$ solid angular dependence of the transport properties. A clear anomalous Hall effect (AHE) was detected for every sample, with no magnetic ordering observed in the system to the experimental sensitivity of torque magnetometry. Interestingly, the AHE takes large values when the magnetic field is rotated in-plane, with the values vanishing above $sim 60$ K where the negative longitudinal magnetoresistance (LMR) also disappears. This suggests a close relation in their origins, which we attribute to Berry curvature generated by the Weyl nodes.
We start closing a gap in the comparison of experimental and theoretical data associated with the spin Hall effect. Based on a first-principles characterization of electronic structure and a semiclassical description of electron transport, we compute the skew-scattering contribution to the transverse spin and charge currents generated by spin and anomalous Hall effect in a Co/Cu multilayer system doped with Bi impurities. The fact that the created currents cross the interface between the two materials strongly influences the efficiency of charge to spin current conversion, as demonstrated by our results.
We evaluate the topological character of TaAs through a detailed study of the angular, magnetic-field and temperature dependence of its magnetoresistivity and Hall-effect(s), and of its bulk electronic structure through quantum oscillatory phenomena. At low temperatures, and for fields perpendicular to the electrical current, we extract an extremely large Hall angle $Theta_H$ at higher fields, that is $Theta_H sim 82.5^{circ}$, implying a very pronounced Hall signal superimposed into its magnetoresistivity. For magnetic fields and electrical currents perpendicular to the emph{c}-axis we observe a very pronounced planar Hall-effect, when the magnetic field is rotated within the basal plane. This effect is observed even at higher temperatures, i.e. as high as $T = 100$ K, and predicted recently to result from the chiral anomaly among Weyl points. Superimposed onto this planar Hall, which is an even function of the field, we observe an anomalous planar Hall-signal akin to the one reported for that is an odd function of the field. Below 100 K, negative longitudinal magnetoresistivity (LMR), initially ascribed to the chiral anomaly and subsequently to current inhomogeneities, is observed in samples having different geometries and contact configurations, once the large Hall signal is subtracted. Our measurements reveal a phase transition upon approaching the quantum limit that leads to the reconstruction of the FS and to the concomitant suppression of the negative LMR indicating that it is intrinsically associated with the Weyl dispersion at the Fermi level. For fields along the emph{a}-axis it also leads to a pronounced hysteresis pointing to a field-induced electronic phase-transition. This collection of unconventional tranport observations points to the prominent role played by the axial anomaly among Weyl nodes.
Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultra-low temperature (usually below 300 mK), which is mainly attributed to inhomogeneous magnetic doping, becomes a daunting challenge for potential applications. Here, a textit{nonmagnetic}-doping strategy is proposed to produce ferromagnetism and realize QAHE in topological insulators. We numerically demonstrated that magnetic moments can be induced by nitrogen or carbon substitution in Bi$_2$Se$_3$, Bi$_2$Te$_3$, and Sb$_2$Te$_3$, but only nitrogen-doped Sb$_2$Te$_3$ exhibits long-range ferromagnetism and preserve large bulk band gap. We further show that its corresponding thin-film can harbor QAHE at temperatures of 17-29 Kelvin, which is two orders of magnitude higher than the typical temperatures in similar systems. Our proposed textit{nonmagnetic} doping scheme may shed new light in experimental realization of high-temperature QAHE in topological insulators.
We quantitatively evaluate a spin anomalous Hall effect (SAHE), generating spin angular momentum flow (spin current, $J_{rm s}$), in an L1$rm_{0}$-FePt ferromagnet by exploiting giant magnetoresistance devices with L1$rm_{0}$-FePt / Cu / Ni$rm_{81}$Fe$rm_{19}$ . From the ferromagnetic resonance linewidth modulated by the charge current ($J_{rm c}$) injection, the spin anomalous Hall angle ($ alpha_{rm SAH} $) is obtained to be 0.25 $ pm $ 0.03. The evaluation of $ alpha_{rm SAH} $ at different configurations between $J_{rm c}$ and magnetization enables us to discuss the symmetry of SAHE and gives the unambiguous evidence that SAHE is the source of $J_{rm s}$. Thanks to the large $ alpha_{rm SAH} $, we demonstrate the SAHE-induced magnetization switching.
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