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Register a new userOptical coherence of Er$^{3+}$:Y$_2$O$_3$ ceramics for telecommunication quantum technologies
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We report an optical homogeneous linewidth of 580 $pm$ 20 Hz of Er$^{3+}$:Y$_2$O$_3$ ceramics at millikelvin temperatures, narrowest so far in rare-earth doped ceramics. We show slow spectral diffusion of $sim$2 kHz over a millisecond time scale. Temperature, field dependence of optical coherence and spectral diffusions reveal the remaining dephasing mechanism as elastic two-level systems in polycrystalline grain boundaries and superhyperfine interactions of Er$^{3+}$ with nuclear spins. In addition, we perform spectral holeburning and measure up to 5 s hole lifetimes. These spectroscopic results put Er$^{3+}$:Y$_2$O$_3$ ceramics as a promising candidate for telecommunication quantum memories and light-matter interfaces.
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Decoherence of the 795 nm $^3$H$_6$ to $^3$H$_4$ transition in 1%Tm$^{3+}$:Y$_3$Ga$_5$O$_{12}$ (Tm:YGG) is studied at temperatures as low as 1.2 K. The temperature, magnetic field, frequency, and time-scale (spectral diffusion) dependence of the optical coherence lifetime is measured. Our results show that the coherence lifetime is impacted less by spectral diffusion than other known thulium-doped materials. Photon echo excitation and spectral hole burning methods reveal uniform decoherence properties and the possibility to produce full transparency for persistent spectral holes across the entire 56 GHz inhomogeneous bandwidth of the optical transition. Temperature-dependent decoherence is well described by elastic Raman scattering of phonons with an additional weaker component that may arise from a low density of glass-like dynamic disorder modes (two-level systems). Analysis of the observed behavior suggests that an optical coherence lifetime approaching one millisecond may be possible in this system at temperatures below 1 K for crystals grown with optimized properties. Overall, we find that Tm:YGG has superior decoherence properties compared to other Tm-doped crystals and is a promising candidate for applications that rely on long coherence lifetimes, such as optical quantum memories and photonic signal processing.
We report on the study of optical properties of mist CVD grown alpha Gallium oxide with the observation of excitonic absorption in spectral responsivity measurements. 163 nm of Gallium oxide was grown on sapphire using Gallium acetylacetonate as the starting solution at a substrate temperature of 450 deg C. The film was found to be crystalline and of alpha phase with an on axis full width at half maximum of 92 arcsec as confirmed from X ray diffraction scans. The Taucs plot extracted from absorption spectroscopy exhibited two transitions in the UV regime at 5.3 eV and 5.6 eV, corresponding to excitonic absorption and direct band to band transition respectively. The binding energy of exciton was extracted to be 114 meV from spectral responsivity measurements. Further, metal semiconductor metal photodetectors with lateral inter digitated geometry were fabricated on the film. A sharp band edge was observed at 230 nm in the spectral response with peak responsivity of around 1 Amperes per Watt at a bias of 20 V. The UV to visible rejection ratio was found to be around 100 while the dark current was measured to be around 0.1 nA.
Direct UV-written waveguides are fabricated in silica-on-silicon with birefringence of $(4.9 pm 0.2) times 10^{-4}$, much greater than previously reported in this platform. We show that these waveguides are suitable for the generation of heralded single photons at telecommunication wavelengths by spontaneous four-wave mixing. A pulsed pump field at 1060 nm generates pairs of photons in highly detuned, spectrally uncorrelated modes near 1550 nm and 800 nm. Waveguide-to-fiber coupling efficiencies of 78-91% are achieved for all fields. Waveguide birefringence is controlled through dopant concentration of $mathrm{GeCl_4}$ and $mathrm{BCl_3}$ using the flame hydrolysis deposition process. The technology provides a route towards the scalability of silica-on-silicon integrated components for photonic quantum experiments.
We investigate the relevant spectroscopic properties of the 795 nm $^3$H$_6$$leftrightarrow$$^3$H$_4$ transition in 1% Tm$^{3+}$:Y$_3$Ga$_5$O$_{12}$ at temperatures as low as 1.2 K for optical quantum memories based on persistent spectral tailoring of narrow absorption features. Our measurements reveal that this transition has uniform coherence properties over a 56 GHz bandwidth, and a simple hyperfine structure split by $pm$44 MHz/T with lifetimes of up to hours. Furthermore, we find a $^3$F$_4$ population lifetime of 64 ms -- one of the longest lifetimes observed for an electronic level in a solid --, and an exceptionally long coherence lifetime of 490 $mu$s -- the longest ever observed for optical transitions of Tm$^{3+}$ ions in a crystal. Our results suggest that this material allows realizing broadband quantum memories that enable spectrally multiplexed quantum repeaters.
Nanostructured rare-earth-ion doped materials are increasingly being investigated for on-chip implementations of quantum information processing protocols as well as commercial applications such as fluorescent lighting. However, achieving high-quality and optimized materials at the nanoscale is still challenging. Here we present a detailed study of the restriction of phonon processes in the transition from bulk crystals to small ($le$ 40 nm) nanocrystals by observing the relaxation dynamics between crystal-field levels of Tb$^{3+}$:Y$_3$Al$_5$O$_{12}$. We find that population relaxation dynamics are modified as the particle size is reduced, consistent with our simulations of inhibited relaxation through a modified vibrational density of states and hence modified phonon emission. However, our experiments also indicate that non-radiative processes not driven by phonons are also present in the smaller particles, causing transitions and rapid thermalization between the levels on a timescale of $<$100 ns.
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