Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userDynamical Phase Transitions in Topological Insulators
71
0
0.0
(
0
)
Authors
N. Sedlmayr
Ask ChatGPT about the research
No Arabic abstract
The traditional concept of phase transitions has, in recent years, been widened in a number of interesting ways. The concept of a topological phase transition separating phases with a different ground state topology, rather than phases of different symmetries, has become a large widely studied field in its own right. Additionally an analogy between phase transitions, described by non-analyticities in the derivatives of the free energy, and non-analyticities which occur in dynamically evolving correlation functions has been drawn. These are called dynamical phase transitions and one is often now far from the equilibrium situation. In these short lecture notes we will give a brief overview of the history of these concepts, focusing in particular on the way in which dynamical phase transitions themselves can be used to shed light on topological phase transitions and topological phases. We will go on to focus, first, on the effect which the topologically protected edge states, which are one of the interesting consequences of topological phases, have on dynamical phase transitions. Second we will consider what happens in the experimentally relevant situations where the system begins either in a thermal state rather than the ground state, or exchanges particles with an external environment.
rate research
Read More
We investigate the Loschmidt amplitude and dynamical quantum phase transitions in multiband one dimensional topological insulators. For this purpose we introduce a new solvable multiband model based on the Su-Schrieffer-Heeger model, generalized to unit cells containing many atoms but with the same symmetry properties. Such models have a richer structure of dynamical quantum phase transitions than the simple two-band topological insulator models typically considered previously, with both quasiperiodic and aperiodic dynamical quantum phase transitions present. Moreover the aperiodic transitions can still occur for quenches within a single topological phase. We also investigate the boundary contributions from the presence of the topologically protected edge states of this model. Plateaus in the boundary return rate are related to the topology of the time evolving Hamiltonian, and hence to a dynamical bulk-boundary correspondence. We go on to consider the dynamics of the entanglement entropy generated after a quench, and its potential relation to the critical times of the dynamical quantum phase transitions. Finally, we investigate the fidelity susceptibility as an indicator of the topological phase transitions, and find a simple scaling law as a function of the number of bands of our multiband model which is found to be the same for both bulk and boundary fidelity susceptibilities.
We investigate disorder-driven topological phase transitions in quantized electric quadrupole insulators. We show that chiral symmetry can protect the quantization of the quadrupole moment $q_{xy}$, such that the higher-order topological invariant is well-defined even when disorder has broken all crystalline symmetries. Moreover, nonvanishing $q_{xy}$ and consequent corner modes can be induced from a trivial insulating phase by disorder that preserves chiral symmetry. The critical points of such topological phase transitions are marked by the occurrence of extended boundary states even in the presence of strong disorder. We provide a systematic characterization of these disorder-driven topological phase transitions from both bulk and boundary descriptions.
The interplay between non-Hermiticity and topology opens an exciting avenue for engineering novel topological matter with unprecedented properties. While previous studies have mainly focused on one-dimensional systems or Chern insulators, here we investigate topological phase transitions to/from quantum spin Hall (QSH) insulators driven by non-Hermiticity. We show that a trivial to QSH insulator phase transition can be induced by solely varying non-Hermitian terms, and there exists exceptional edge arcs in QSH phases. We establish two topological invariants for characterizing the non-Hermitian phase transitions: i) with time-reversal symmetry, the biorthogonal $mathbb{Z}_2$ invariant based on non-Hermitian Wilson loops, and ii) without time-reversal symmetry, a biorthogonal spin Chern number through biorthogonal decompositions of the Bloch bundle of the occupied bands. These topological invariants can be applied to a wide class of non-Hermitian topological phases beyond Chern classes, and provides a powerful tool for exploring novel non-Hermitian topological matter and their device applications.
We consider extended Hubbard models with repulsive interactions on a Honeycomb lattice and the transitions from the semi-metal phase at half-filling to Mott insulating phases. In particular, due to the frustrating nature of the second-neighbor repulsive interactions, topological Mott phases displaying the quantum Hall and the quantum spin Hall effects are found for spinless and spinful fermion models, respectively. We present the mean-field phase diagram and consider the effects of fluctuations within the random phase approximation (RPA). Functional renormalization group analysis also show that these states can be favored over the topologically trivial Mott insulating states.
We investigate the effects of magnetic and nonmagnetic impurities on the two-dimensional surface states of three-dimensional topological insulators (TIs). Modeling weak and strong TIs using a generic four-band Hamiltonian, which allows for a breaking of inversion and time-reversal symmetries and takes into account random local potentials as well as the Zeeman and orbital effects of external magnetic fields, we compute the local density of states, the single-particle spectral function, and the conductance for a (contacted) slab geometry by numerically exact techniques based on kernel polynomial expansion and Greens function approaches. We show that bulk disorder refills the suface-state Dirac gap induced by a homogeneous magnetic field with states, whereas orbital (Peierls-phase) disorder perserves the gap feature. The former effect is more pronounced in weak TIs than in strong TIs. At moderate randomness, disorder-induced conducting channels appear in the surface layer, promoting diffusive metallicity. Random Zeeman fields rapidly destroy any conducting surface states. Imprinting quantum dots on a TIs surface, we demonstrate that carrier transport can be easily tuned by varying the gate voltage, even to the point where quasi-bound dot states may appear.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
