Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userLarge spin Hall magnetoresistance in antiferromagnetic alpha-Fe2O3/Pt heterostructures
367
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We investigate the spin Hall magnetoresistance (SMR) at room temperature in thin film heterostructures of antiferromagnetic, insulating, (0001)-oriented alpha-Fe2O3 (hematite) and Pt. We measure their longitudinal and transverse resistivities while rotating an applied magnetic field of up to 17T in three orthogonal planes. For out-of-plane magnetotransport measurements, we find indications for a multidomain antiferromagnetic configuration whenever the field is aligned along the film normal. For in-plane field rotations, we clearly observe a sinusoidal resistivity oscillation characteristic for the SMR due to a coherent rotation of the Neel vector. The maximum SMR amplitude of 0.25% is, surprisingly, twice as high as for prototypical ferrimagnetic Y3Fe5O12/Pt heterostructures. The SMR effect saturates at much smaller magnetic fields than in comparable antiferromagnets, making the alpha-Fe2O3/Pt system particularly interesting for room-temperature antiferromagnetic spintronic applications.
rate research
Read More
We investigate the spin-current transport through antiferromagnetic insulator (AFMI) by means of the spin-Hall magnetoressitance (SMR) over a wide temperature range in Pt/NiO/Y$_3$Fe$_5$O$_{12}$ (Pt/NiO/YIG) heterostructures. By inserting the AFMI NiO layer, the SMR dramatically decreases by decreasing the temperature down to the antiferromagnetically ordered state of NiO, which implies that the AFM order prevents rather than promotes the spin-current transport. On the other hand, the magnetic proximity effect (MPE) on induced Pt moments by YIG, which entangles with the spin-Hall effect (SHE) in Pt, can be efficiently screened, and pure SMR can be derived by insertion of NiO. The dual roles of the NiO insertion including efficiently blocking the MPE and transporting the spin current from Pt to YIG are outstanding compared with other antiferromagnetic (AFM) metal or nonmagnetic metal (NM).
We present the Co-Gd composition dependence of the spin-Hall magnetoresistance (SMR) and anisotropic magnetoresistance (AMR) for ferrimagnetic Co100-xGdx / Pt bilayers. With Gd concentration x, its magnetic moment increasingly competes with the Co moment in the net magnetization. We find a nearly compensated ferrimagnetic state at x = 24. The AMR changes sign from positive to negative with increasing x, vanishing near the magnetization compensation. On the other hand, the SMR does not vary significantly even where the AMR vanishes. These experimental results indicate that very different scattering mechanisms are responsible for AMR and SMR. We discuss a possible origin for the alloy composition dependence.
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct observation of the antiferromagnetic state, however, is challenging due to the absence of a macroscopic magnetization. Here, we show that the spin Hall magnetoresistance (SMR) is a versatile tool to probe the antiferromagnetic spin structure via simple electrical transport experiments by investigating the easy-plane antiferromagnetic insulators $alpha$-Fe2O3 (hematite) and NiO in bilayer heterostructures with a Pt heavy metal top electrode. While rotating an external magnetic field in three orthogonal planes, we record the longitudinal and the transverse resistivities of Pt and observe characteristic resistivity modulations consistent with the SMR effect. We analyze both their amplitude and phase and compare the data to the results from a prototypical collinear ferrimagnetic Y3Fe5O12/Pt bilayer. The observed magnetic field dependence is explained in a comprehensive model, based on two magnetic sublattices and taking into account magnetic field-induced modifications of the domain structure. Our results show that the SMR allows us to understand the spin configuration and to investigate magnetoelastic effects in antiferromagnetic multi-domain materials. Furthermore, in $alpha$-Fe2O3/Pt bilayers, we find an unexpectedly large SMR amplitude of $2.5 times 10^{-3}$, twice as high as for prototype Y3Fe5O12/Pt bilayers, making the system particularly interesting for room-temperature antiferromagnetic spintronic applications.
Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins and magnetization at the interface. SMR has been used to read out information written in a small magnet and to detect magnetization dynamics, but it has been limited to magnets; magnetic ordered phases or instability of magnetic phase transition has been believed to be indispensable. Here, we report the observation of SMR in a paramagnetic insulator Gd$_{3}$Ga$_{5}$O$_{12}$ (GGG) without spontaneous magnetization combined with a Pt film. The paramagnetic SMR can be attributed to spin-transfer torque acting on localized spins in GGG. We determine the efficiencies of spin torque and spin-flip scattering at the Pt/GGG interface, and demonstrate these quantities can be tuned with external magnetic fields. The results clarify the mechanism of spin-transport at a metal/paramagnetic insulator interface, which gives new insight into the spintronic manipulation of spin states in paramagnetic systems.
In this study, we report the epitaxial growth of a series of {alpha}-Sn films on InSb substrate by molecular beam epitaxy (MBE) with thickness varying from 10 nm to 400 nm. High qualities of the {alpha}-Sn films are confirmed. An enhanced large magnetoresistance (MR) over 450,000% has been observed compared to that of the bare InSb substrate. Thickness, angle and temperature dependent MR are used to demonstrate the effects of {alpha}-Sn films on the electrical transport properties.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
