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Register a new userNarrow photoluminescence peak of epitaxial MoS$_2$ on graphene/Ir(111)
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We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS$_2$ on graphene/Ir(111). This observation is explained in terms of a weak graphene-MoS$_2$ interaction that prevents PL quenching expected for a metallic substrate. The weak interaction of MoS$_2$ with the graphene is highlighted by angle-resolved photoemission spectroscopy and temperature dependent Raman spectroscopy. These methods reveal that there is no hybridization between electronic states of graphene and MoS$_2$ and a different thermal expansion of graphene and MoS$_2$. Molecular beam epitaxy grown MoS2 on graphene is therefore an important platform for optoelectronics which allows for large area growth with controlled properties.
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We apply scanning tunneling spectroscopy to determine the bandgaps of mono-, bi- and trilayer MoS$_2$ grown on a graphene single crystal on Ir(111). Besides the typical scanning tunneling spectroscopy at constant height, we employ two additional spectroscopic methods giving extra sensitivity and qualitative insight into the $k$-vector of the tunneling electrons. Employing this comprehensive set of spectroscopic methods in tandem, we deduce a bandgap of $2.53pm0.08$ eV for the monolayer. This is close to the predicted values for freestanding MoS$_2$ and larger than is measured for MoS$_2$ on other substrates. Through precise analysis of the `comprehensive tunneling spectroscopy we also identify critical point energies in the mono- and bilayer MoS$_2$ band structures. These compare well with their calculated freestanding equivalents, evidencing the graphene/Ir(111) substrate as an excellent environment upon which to study the many feted electronic phenomena of monolayer MoS$_2$ and similar materials. Additionally, this investigation serves to expand the fledgling field of the comprehensive tunneling spectroscopy technique itself.
The intercalation of Eu underneath Gr on Ir(111) is comprehensively investigated by microscopic, magnetic, and spectroscopic measurements, as well as by density functional theory. Depending on the coverage, the intercalated Eu atoms form either a $(2 times 2)$ or a $(sqrt{3} times sqrt{3})$R$30^{circ}$ superstructure with respect to Gr. We investigate the mechanisms of Eu penetration through a nominally closed Gr sheet and measure the electronic structures and magnetic properties of the two intercalation systems. Their electronic structures are rather similar. Compared to Gr on Ir(111), the Gr bands in both systems are essentially rigidly shifted to larger binding energies resulting in n-doping. The hybridization of the Ir surface state $S_1$ with Gr states is lifted, and the moire superperiodic potential is strongly reduced. In contrast, the magnetic behavior of the two intercalation systems differs substantially as found by X-ray magnetic circular dichroism. The $(2 times 2)$ Eu structure displays plain paramagnetic behavior, whereas for the $(sqrt{3} times sqrt{3})$R$30^{circ}$ structure the large zero-field susceptibility indicates ferromagnetic coupling, despite the absence of hysteresis at 10 K. For the latter structure, a considerable easy-plane magnetic anisotropy is observed and interpreted as shape anisotropy.
We have investigated the magnetism of the bare and graphene-covered (111) surface of a Ni single crystal employing three different magnetic imaging techniques and ab initio calculations, covering length scales from the nanometer regime up to several millimeters. With low temperature spinpolarized scanning tunneling microscopy (SP-STM) we find domain walls with widths of 60 - 90 nm, which can be moved by small perpendicular magnetic fields. Spin contrast is also achieved on the graphene-covered surface, which means that the electron density in the vacuum above graphene is substantially spin-polarized. In accordance with our ab initio calculations we find an enhanced atomic corrugation with respect to the bare surface, due to the presence of the carbon pz orbitals and as a result of the quenching of Ni surface states. The latter also leads to an inversion of spinpolarization with respect to the pristine surface. Room temperature Kerr microscopy shows a stripe like domain pattern with stripe widths of 3 - 6 {mu}m. Applying in-plane-fields, domain walls start to move at about 13 mT and a single domain state is achieved at 140 mT. Via scanning electron microscopy with polarization analysis (SEMPA) a second type of modulation within the stripes is found and identified as 330 nm wide V-lines. Qualitatively, the observed surface domain pattern originates from bulk domains and their quasi-domain branching is driven by stray field reduction.
Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berrys phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties which may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material.Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nanoelectronics.
Graphene oxide (GO) flakes have been deposited to bridge the gap between two epitaxial graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers (SB) at the graphene/graphene oxide junctions, as a consequence of the band-gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 $^circ$C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm$^2$/Vs, rivaling silicon. {it In situ} local oxidation of patterned epitaxial graphene has been achieved.
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