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Register a new userModulation of the superconducting critical temperature due to quantum confinement at the LaAlO$_3$/SrTiO$_3$ interface
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Added by
Davide Filippo Valentinis
Publication date
2016
fields
Physics
and research's language is
English
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Superconductivity develops in bulk doped SrTiO$_3$ and at the LaAlO$_3$/SrTiO$_3$ interface with a dome-shaped density dependence of the critical temperature $T_c$, despite different dimensionalities and geometries. We propose that the $T_c$ dome of LaAlO$_3$/SrTiO$_3$ is a shape resonance due to quantum confinement of superconducting bulk SrTiO$_3$. We substantiate this interpretation by comparing the exact solutions of a three-dimensional and quasi-two-dimensional two-band BCS gap equation. This comparison highlights the role of heavy bands for $T_c$ in both geometries. For bulk SrTiO$_3$, we extract the density dependence of the pairing interaction from the fit to experimental data. We apply quantum confinement in a square potential well of finite depth and calculate $T_c$ in the confined configuration. We compare the calculated $T_c$ to transport experiments and provide an explanation as to why the optimal $T_c$s are so close to each other in two-dimensional interfaces and the three-dimensional bulk material.
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We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconducting behavior tunable by electric field effect. In the normal state, we measured universal conductance fluctuations, signature of phase-coherent transport in small structures. The achievement of reliable lateral confinement of the 2DEG opens the way to the realization of quantum electronic devices at the LaAlO$_3$/SrTiO$_3$ interface.
Localization of electrons in the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ interface is investigated by varying the channel thickness in order to establish the nature of the conducting channel. Layers of SrTiO$_3$ were grown on NdGaO$_3$ (110) substrates and capped with LaAlO$_3$. When the SrTiO$_3$ thickness is $leq 6$ unit cells, most electrons at the interface are localized, but when the number of SrTiO$_3$ layers is 8-16, the free carrier density approaches $3.3 times 10^{14}$ cm$^{-2}$, the value corresponding to charge transfer of 0.5 electron per unit cell at the interface. The number of delocalized electrons decreases again when the SrTiO$_3$ thickness is $geq 20$ unit cells. The $sim{4}$ nm conducting channel is therefore located significantly below the interface. The results are explained in terms of Anderson localization and the position of the mobility edge with respect to the Fermi level.
We measure the gate voltage ($V_g$) dependence of the superconducting properties and the spin-orbit interaction in the (111)-oriented LaAlO$_3$/SrTiO$_3$ interface. Superconductivity is observed in a dome-shaped region in the carrier density-temperature phase diagram with the maxima of superconducting transition temperature $T_c$ and the upper critical fields lying at the same $V_g$. The spin-orbit interaction determined from the superconducting parameters and confirmed by weak-antilocalization measurements follows the same gate voltage dependence as $T_c$. The correlation between the superconductivity and spin-orbit interaction as well as the enhancement of the parallel upper critical field, well beyond the Chandrasekhar-Clogston limit suggest that superconductivity and the spin-orbit interaction are linked in a nontrivial fashion. We propose possible scenarios to explain this unconventional behavior.
The paradigm of electrons interacting with a periodic lattice potential is central to solid-state physics. Semiconductor heterostructures and ultracold neutral atomic lattices capture many of the essential properties of 1D electronic systems. However, fully one-dimensional superlattices are highly challenging to fabricate in the solid state due to the inherently small length scales involved. Conductive atomic-force microscope (c-AFM) lithography has recently been demonstrated to create ballistic few-mode electron waveguides with highly quantized conductance and strongly attractive electron-electron interactions. Here we show that artificial Kronig-Penney-like superlattice potentials can be imposed on such waveguides, introducing a new superlattice spacing that can be made comparable to the mean separation between electrons. The imposed superlattice potential fractures the electronic subbands into a manifold of new subbands with magnetically-tunable fractional conductance (in units of $e^2/h$). The lowest $G=2e^2/h$ plateau, associated with ballistic transport of spin-singlet electron pairs, is stable against de-pairing up to the highest magnetic fields explored ($|B|=16$ T). A 1D model of the system suggests that an engineered spin-orbit interaction in the superlattice contributes to the enhanced pairing observed in the devices. These findings represent an important advance in the ability to design new families of quantum materials with emergent properties, and mark a milestone in the development of a solid-state 1D quantum simulation platform.
The conducting gas that forms at the interface between LaAlO$_3$ and SrTiO$_3$ has proven to be a fertile playground for a wide variety of physical phenomena. The bulk of previous research has focused on the (001) and (110) crystal orientations. Here we report detailed measurements of the low-temperature electrical properties of (111) LAO/STO interface samples. We find that the low-temperature electrical transport properties are highly anisotropic, in that they differ significantly along two mutually orthogonal crystal orientations at the interface. While anisotropy in the resistivity has been reported in some (001) samples and in (110) samples, the anisotropy in the (111) samples reported here is much stronger, and also manifests itself in the Hall coefficient as well as the capacitance. In addition, the anisotropy is not present at room temperature and at liquid nitrogen temperatures, but only at liquid helium temperatures and below. The anisotropy is accentuated by exposure to ultraviolet light, which disproportionately affects transport along one surface crystal direction. Furthermore, analysis of the low-temperature Hall coefficient and the capacitance as a function of back gate voltage indicates that in addition to electrons, holes contribute to the electrical transport.
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