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Observation of Dirac-like band dispersion in LaAgSb$_2$

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 Added by Pierre Richard
 Publication date 2015
  fields Physics
and research's language is English




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We present a combined angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations study of the electronic structure of LaAgSb$_2$ in the entire first Brillouin zone. We observe a Dirac-cone-like structure in the vicinity of the Fermi level formed by the crossing of two linear energy bands, as well as the nested segments of Fermi surface pocket emerging from the cone. Our ARPES results show the close relationship of the Dirac cone to the charge-density-wave ordering, providing consistent explanations for exotic behaviors in this material.



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Artificial lattices provide a tunable platform to realize exotic quantum devices. A well-known example is artificial graphene (AG), in which electrons are confined in honeycomb lattices and behave as massless Dirac fermions. Recently, AG systems have been constructed by manipulating molecules using scanning tunnelling microscope tips, but the nanoscale size typical for these constructed systems are impossible for practical device applications and insufficient for direct investigation of the electronic structures using angle-resolved photoemission spectroscopy (ARPES). Here, we demonstrate the synthesis of macroscopic AG by self-assembly of C$_{60}$ molecules on metal surfaces. Our theoretical calculations and ARPES measurements directly confirm the existence of Dirac cones at the $K$ ($K^prime$) points of the Brillouin zone (BZ), in analogy to natural graphene. These results will stimulate ongoing efforts to explore the exotic properties in artificial lattices and provide an important step forward in the realization of novel molecular quantum devices.
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Interlayer excitons (IXs) possess a much longer lifetime than intralayer excitons due to the spatial separation of the electrons and holes; hence, they have been pursued to create exciton condensates for decades. The recent emergence of two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs), and of their van der Waals heterostructures (HSs), in which two different 2D materials are layered together, has created new opportunities to study IXs. Here we present the observation of IX gases within two stacked structures consisting of hBN/WSe$_2$/hBN/p: WSe$_2$/hBN. The IX energy of the two different structures differed by 82 meV due to the different thickness of the hBN spacer layer between the TMD layers. We demonstrate that the lifetime of the IXs is shortened when the temperature and the pump power increase. We attribute this nonlinear behavior to an Auger process.
148 - S. Y. Tan , Y. Fang , D. H. Xie 2015
The electronic structure of FeSe thin films grown on SrTiO3 substrate is studied by angle-resolved photoemission spectroscopy (ARPES). We reveal the existence of Dirac cone band dispersions in FeSe thin films thicker than 1 Unit Cell below the nematic transition temperature, whose apex are located -10 meV below Fermi energy. The evolution of Dirac cone electronic structure for FeSe thin films as function of temperature, thickness and cobalt doping is systematically studied. The Dirac cones are found to be coexisted with the nematicity in FeSe, disappear when nematicity is suppressed. Our results provide some indication that the spin degrees of freedom may play some kind of role in the nematicity of FeSe.
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