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Production yield of rare-earth ions implanted into an optical crystal

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 Added by Thomas Kornher
 Publication date 2015
  fields Physics
and research's language is English




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Rare-earth ions doped into desired locations of optical crystals might enable a range of novel integrated photonic devices for quantum applications. With this aim, we have investigated the production yield of cerium and praseodymium by means of ion implantation. As a measure, the collected fluorescence intensity from both, implanted samples and single centers was used. With a tailored annealing procedure for cerium, a yield up to 53% was estimated. Praseodymium yield amounts up to 91%.

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We describe a method for creating small quantum processors in a crystal stoichiometric in an optically active rare earth ion. The crystal is doped with another rare earth, creating an ensemble of identical clusters of surrounding ions, whose optical and hyperfine frequencies are uniquely determined by their spatial position in the cluster. Ensembles of ions in each unique position around the dopant serve as qubits, with strong local interactions between ions in different qubits. These ensemble qubits can each be used as a quantum memory for light, and we show how the interactions between qubits can be used to perform linear operations on the stored photonic state. We also describe how these ensemble qubits can be used to enact, and study, error correction.
We report on hybrid circuit QED experiments with focused ion beam implanted Er$^{3+}$ ions in Y$_2$SiO$_5$ coupled to an array of superconducting lumped element microwave resonators. The Y$_2$SiO$_5$ crystal is divided into several areas with distinct erbium doping concentrations, each coupled to a separate resonator. The coupling strength is varied from 5 MHz to 18.7 MHz, while the linewidth ranges between 50 MHz and 130 MHz. We confirm the paramagnetic properties of the implanted spin ensemble by evaluating the temperature dependence of the coupling. The efficiency of the implantation process is analyzed and the results are compared to a bulk doped Er:Y$_2$SiO$_5$ sample. We demonstrate the successful integration of these engineered erbium spin ensembles with superconducting circuits.
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