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Register a new userLorentz angle measurements in irradiated silicon detectors between 77 K and 300 K
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Future experiments are using silicon detectors in a high radiation environment and in high magnetic fields. The radiation tolerance of silicon improves by cooling it to temperatures below 180 K. At low temperatures the mobility increases, which leads to larger deflections of the charge carriers by the Lorentz force. A good knowledge of the Lorentz angle is needed for design and operation of silicon detectors. We present measurements of the Lorentz angle between 77 K and 300 K before and after irradiation with a primary beam of 21 MeV protons.
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Future experiments will use silicon sensors in the harsh radiation environment of the LHC (Large Hadron Collider) and high magnetic fields. The drift direction of the charge carriers is affected by the Lorentz force due to the high magnetic field. Also the resulting radiation damage changes the properties of the drift. In this paper measurements of the Lorentz angle of electrons and holes before and after irradiation are reviewed and compared with a simple algorithm to compute the Lorentz angle.
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.
Pixel detectors are used in the innermost part of multi purpose experiments at the Large Hadron Collider (LHC) and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of the detectors has thoroughly been tested up to the fluences expected at the LHC. In case of an LHC upgrade the fluence will be much higher and it is not yet clear up to which radii the present pixel technology can be used. In order to establish such a limit, pixel sensors of the size of one CMS pixel readout chip (PSI46V2.1) have been bump bonded and irradiated with positive pions up to 6E14 Neq/cm^2 at PSI and with protons up to 5E15 Neq/cm^2. The sensors were taken from production wafers of the CMS barrel pixel detector. They use n-type DOFZ material with a resistance of about 3.7kOhm cm and an n-side read out. As the performance of silicon sensors is limited by trapping, the response to a Sr-90 source was investigated. The highly energetic beta-particles represent a good approximation to minimum ionising particles. The bias dependence of the signal for a wide range of fluences will be presented.
Ultracold neutrons (UCNs) were produced in a 4 liter volume of superfluid helium using the PF1B cold neutron beam facility at the Institut Laue-Langevin and then extracted to a detector at room temperature. With a converter temperature of 1.08 K the number of accumulated UCNs was counted to be $91,!700 pm 300$. From this, we derive a volumetric UCN production rate of $(6.9 pm 1.7),mathrm{cm^{-3},s^{-1}}$, which includes a correction for losses in the converter during UCN extraction caused by a short storage time, but not accounting for UCN transport and detection efficiencies. The up-scattering rate of UCNs due to excitations in the superfluid was studied by scanning the temperature between 1.2-2.4 K. Using the temperature-dependent UCN production rate calculated from inelastic neutron scattering data in the analysis, the only UCN up-scattering process found to be present was from two-phonon scattering. Our analysis rules out contributions from the other scattering processes to $lesssim 10%$ of their predicted levels.
Thin pad detectors made from 75 $mu$m thick epitaxial silicon on low resistivity substrate were irradiated with reactor neutrons to fluences from 2.5$times 10^{16}$ n/cm$^2$ to 1$times 10^{17}$ n/cm$^2$. Edge-TCT measurements showed that the active detector thickness is limited to the epitaxial layer and does not extend into the low resistivity substrate even after the highest fluence. Detector current was measured under reverse and forward bias. The forward current was higher than the reverse at the same voltage but the difference gets smaller with increasing fluence. Rapid increase of current (breakdown) above ~ 700 V under reverse bias was observed. An annealing study at 60$^circ$C was made to 1200 minutes of accumulated annealing time. It showed that the reverse current anneals with similar time constants as measured at lower fluences. A small increase of forward current due to annealing was seen. Collected charge was measured with electrons from $^{90}$Sr source in forward and reverse bias configurations. Under reverse bias the collected charge increased linearly with bias voltage up to 6000 electrons at 2.5$times 10^{16}$ n/cm$^2$ and 3000 electrons at 1$times 10^{17}$ n/cm$^2$. Rapid increase of noise was measured above $sim$ 700 V reverse bias due to breakdown resulting in worse S/N ratio. At low bias voltages slightly more charge is measured under forward bias compared to reverse. However better S/N is achieved under reverse bias. Effective trapping times were estimated from charge collection measurements under forward bias showing that at high fluences they are much longer than values extrapolated from low fluence measurements - at 1$times 10^{17}$ n/cm$^2$ a factor of 6 larger value was measured.
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