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Register a new userResonances in a two-dimensional electron waveguide with a single delta-function scatterer
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We study the conductance properties of a straight two-dimensional electron waveguide with an s-like scatterer modeled by a single delta-function potential with a finite number of modes. Even such a simple system exhibits interesting resonance phenomena. These resonances are explained in terms of quasi-bound states both by using a direct solution of the Schroedinger equation and by studying the Greens function of the system. Using the Greens function we calculate the survival probability as well as the power absorption and show the influence of the quasi-bound states on these two quantities.
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We obtain exact solutions to the two-dimensional (2D) Dirac equation for the one-dimensional Poschl-Teller potential which contains an asymmetry term. The eigenfunctions are expressed in terms of Heun confluent functions, while the eigenvalues are determined via the solutions of a simple transcendental equation. For the symmetric case, the eigenfunctions of the supercritical states are expressed as spheroidal wave functions, and approximate analytical expressions are obtained for the corresponding eigenvalues. A universal condition for any square integrable symmetric potential is obtained for the minimum strength of the potential required to hold a bound state of zero energy. Applications for smooth electron waveguides in 2D Dirac-Weyl systems are discussed.
Silicon spin qubits have achieved high-fidelity one- and two-qubit gates, above error correction thresholds, promising an industrial route to fault-tolerant quantum computation. A significant next step for the development of scalable multi-qubit processors is the operation of foundry-fabricated, extendable two-dimensional (2D) arrays. In gallium arsenide, 2D quantum-dot arrays recently allowed coherent spin operations and quantum simulations. In silicon, 2D arrays have been limited to transport measurements in the many-electron regime. Here, we operate a foundry-fabricated silicon 2x2 array in the few-electron regime, achieving single-electron occupation in each of the four gate-defined quantum dots, as well as reconfigurable single, double, and triple dots with tunable tunnel couplings. Pulsed-gate and gate-reflectometry techniques permit single-electron manipulation and single-shot charge readout, while the two-dimensionality allows the spatial exchange of electron pairs. The compact form factor of such arrays, whose foundry fabrication can be extended to larger 2xN arrays, along with the recent demonstration of coherent spin control and readout, paves the way for dense qubit arrays for quantum computation and simulation.
We have observed asymmetric Fano resonances in the conductance of a single electron transistor resulting from interference between a resonant and a nonresonant path through the system. The resonant component shows all the features typical of quantum dots, but the origin of the non-resonant path is unclear. A unique feature of this experimental system, compared to others that show Fano line shapes, is that changing the voltages on various gates allows one to alter the interference between the two paths.
Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beams injection energy, and distance from the injection point. At low injection energies, we find electrons in the beam scatter by small-angles, as has been previously observed. At high injection energies, we find a surprising result: placing the SGM tip where it back-scatters electrons increases the differential conductance through the system. This effect is explained by a non-equilibrium distribution of electrons in a localized region of 2DEG near the injection point. Our data indicate that the spatial extent of this highly non-equilibrium distribution is within ~1 micrometer of the injection point. We approximate the non-equilibrium region as having an effective temperature that depends linearly upon injection energy.
Spin-orbit coupling induced anisotropies of plasmon dynamics are investigated in two-dimensional semiconductor structures. The interplay of the linear Bychkov-Rashba and Dresselhaus spin-orbit interactions drastically affects the plasmon spectrum: the dynamical structure factor exhibits variations over several decades, prohibiting plasmon propagation in specific directions. While this plasmon filtering makes the presence of spin-orbit coupling in plasmon dynamics observable, it also offers a control tool for plasmonic devices. Remarkably, if the strengths of the two interactions are equal, not only the anisotropy, but all the traces of the linear spin-orbit coupling in the collective response disappear.
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